V. Aleshkin, L. Vorobjev, D. Donetsky, T. Dumelow, A. Kastalsky, O. Kuznetsov, G. Mirjalili, L. K. Orlov, T. J. Parker, S. Farjami Shayesteh
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引用次数: 0
Abstract
Summary form only given. The present work is a study of FIR emission from p-type GaAs-AlGaAs and Ge-GeSi structures caused by direct transitions of hot 2D holes between quantum-well subbands and modulation of FIR laser radiation under heating of 2D holes in quantum wells (QW). These phenomena were not observed before.
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