Implementation of Piezoelectric MEMS Microphone for Sensitivity and Sensing Range Enhancement

Shih-Hsiung Tseng, Sung-Cheng Lo, Yu-Chen Chen, Ya-Chu Lee, Mingching Wu, W. Fang
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引用次数: 3

Abstract

This study designs and realizes an improved piezoelectric MEMS microphone with four triangular-cantilevers (Fig. 1) on a commercial 8-inch wafer. As compared with the reference design [1], this study exhibits two merits: (1) special boundary and structure design of the triangular-cantilever for sensitivity enhancement (Fig. 1a); (2) two-stage etching to successively define PZT/electrode and device-Si layers to enable the fabrication of small gaps between triangular-cantilevers for low frequency acoustic sensing enhancement (Fig. 1b). Moreover, the bottom of MEMS microphone chip is bonded (surface mount) on LGA (land-grid-array) for better acoustic performance (Fig. 1c). Preliminary FEM evaluations show the enhancement of proposed type as compare with a reference type (Fig. 2). Measurements indicate the packaged microphone of $1080\ \mu\mathrm{m}$ cavity size: acoustic sensitivity is - 37.54dBV/Pa at 1kHz; ±3dB bandwidth ranges 150Hz to 9.5kHz; noise floor of 20Hz∼20kHz bandwidth and A-weighting is −86.4dBV(A); SNR is 48.9dB(A); measured capacitance of sensing electrode is 410pF at 1kHz; dielectric constant is 250; and loss tangent of PZT is 0.015.
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提高灵敏度和传感范围的压电式MEMS麦克风的实现
本研究在商用8英寸晶圆上设计并实现了一种带有四个三角形悬臂的改进压电MEMS麦克风(图1)。与参考设计[1]相比,本研究有两个优点:(1)为了增强灵敏度,三角形悬臂梁的特殊边界和结构设计(图1a);(2)两阶段蚀刻,连续定义PZT/电极层和器件硅层,以便在三角形悬臂梁之间制造小间隙,用于低频声传感增强(图1b)。此外,MEMS麦克风芯片的底部被粘接(表面贴装)在LGA(陆网阵列)上,以获得更好的声学性能(图1c)。初步的有限元评估表明,与参考型相比,所提出的型号有所增强(图2)。测量表明,封装麦克风的腔尺寸为$1080\ \mu\ mathm {m}$:在1kHz时声灵敏度为- 37.54dBV/Pa;±3dB带宽范围150Hz至9.5kHz;20Hz ~ 20kHz带宽和A加权的本底噪声为−86.4dBV(A);信噪比为48.9dB(A);在1kHz时测得的感应电极电容为410pF;介电常数为250;PZT的损耗正切为0.015。
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