Ambipolar magneto-optical response of ultralow carrier density topological insulators

D. Chaudhuri, M. Salehi, S. Dasgupta, Mintu Mondal, J. Moon, D. Jain, Seongshik Oh, N. P. Armitage
{"title":"Ambipolar magneto-optical response of ultralow carrier density topological insulators","authors":"D. Chaudhuri, M. Salehi, S. Dasgupta, Mintu Mondal, J. Moon, D. Jain, Seongshik Oh, N. P. Armitage","doi":"10.1103/PHYSREVB.103.L081110","DOIUrl":null,"url":null,"abstract":"We have investigated the THz range magneto-optical response of ultralow carrier density films of Sb$_2$Te$_3$ using time-domain THz polarimetry. Undoped Sb$_2$Te$_3$ has a chemical potential that lies inside the bulk valence band. Thus its topological response is masked by bulk carriers. However, with appropriate buffer layer engineering and chemical doping, Sb$_2$Te$_3$ thin films can be grown with extremely low electron or hole densities. The ultralow carrier density samples show unusual optical properties and quantized response in the presence of magnetic fields. Consistent with the expectations for Dirac fermions, a quantized Hall response is seen even in samples where the zero field conductivity falls below detectable levels. The discontinuity in the Faraday angle with small changes in the filling fraction across zero is manifestation of the parity anomaly in 2D Dirac systems with broken time reversal symmetry.","PeriodicalId":8465,"journal":{"name":"arXiv: Mesoscale and Nanoscale Physics","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2020-10-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"arXiv: Mesoscale and Nanoscale Physics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1103/PHYSREVB.103.L081110","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3

Abstract

We have investigated the THz range magneto-optical response of ultralow carrier density films of Sb$_2$Te$_3$ using time-domain THz polarimetry. Undoped Sb$_2$Te$_3$ has a chemical potential that lies inside the bulk valence band. Thus its topological response is masked by bulk carriers. However, with appropriate buffer layer engineering and chemical doping, Sb$_2$Te$_3$ thin films can be grown with extremely low electron or hole densities. The ultralow carrier density samples show unusual optical properties and quantized response in the presence of magnetic fields. Consistent with the expectations for Dirac fermions, a quantized Hall response is seen even in samples where the zero field conductivity falls below detectable levels. The discontinuity in the Faraday angle with small changes in the filling fraction across zero is manifestation of the parity anomaly in 2D Dirac systems with broken time reversal symmetry.
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超低载流子密度拓扑绝缘体的双极性磁光响应
用时域太赫兹偏振法研究了Sb$_2$Te$_3$超低载流子密度薄膜的太赫兹磁光响应。未掺杂的Sb$_2$Te$_3$的化学势位于体价带内。因此,它的拓扑响应被散货船所掩盖。然而,通过适当的缓冲层工程和化学掺杂,可以在极低的电子或空穴密度下生长出Sb$_2$Te$_3$薄膜。超低载流子密度样品在磁场作用下表现出不同寻常的光学特性和量子化响应。与对狄拉克费米子的预期一致,即使在零场电导率低于可检测水平的样品中,也可以看到量子化的霍尔响应。法拉第角的不连续和过零填充分数的微小变化是时间反转对称性破坏的二维狄拉克系统奇偶异常的表现。
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