Spin-Orbit Coupling and Zero-Field Electron Spin Splitting in AlGaN/AlN/GaN Heterostructures with a Polarization Induced Two-Dimensional Electron Gas

Ç. Kurdak, N. Biyikli, H. Cheng, Ü. Özgür, H. Morkoç, V. Litvinov
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Abstract

We studied spin-orbit coupling in wurtzite AlxGa1−xN/AlN/GaN heterostructures with different Al concentrations using weak antilocalization measurements at 1.6 K. Using the persistent photoconductivity effect we change the carrier density in controllable manner. We find that the electron spin splitting energies does not scale linearly with the Fermi wavevector at high carrier densities. From this deviation, for the first time, we are able to extract the cubic spin-orbit parameter for this material system.
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极化诱导二维电子气中AlGaN/AlN/GaN异质结构的自旋轨道耦合和零场电子自旋分裂
我们在1.6 K下使用弱反局域测量研究了不同Al浓度的纤锌矿AlxGa1−xN/AlN/GaN异质结构的自旋轨道耦合。利用持续光导效应可控地改变载流子密度。我们发现在高载流子密度下,电子自旋分裂能不与费米波向量成线性比例。从这一偏差中,我们首次能够提取出该材料体系的立方自旋轨道参数。
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