K. Xiong, Lei Li, Roderick J. Marstell, A. Madjar, N. Strandwitz, J. Hwang, G. Qiu, Yixiu Wang, Wenzhuo Wu, P. Ye, A. Göritz, M. Wietstruck, M. Kaynak
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引用次数: 2
Abstract
For the first time, thousands of tellurene MOSFETs were batch-fabricated by a CMOS-compatible wafer process. However, the yield was only approximately 1% mainly because the tellurene was nonuniform and discontinuous. Nevertheless, the large-scale material-device correlation confirmed that the thicker the tellurene, the higher the current capacity, but the lower the on/off ratio. Such large-scale material/device correlation can help improve both the material and the device in the future.
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