M. Yamashita, T. Kiwa, M. Tonouchi, K. Nikawa, C. Otani, K. Kawase
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引用次数: 4
Abstract
For inspecting electrical failures in large-scale integration (LSI) circuits, we developed the laser-THz emission microscope (LTEM), which records the map of THz emission amplitude in a sample upon excitation with fs laser pulses. We successfully observed the THz emission image of MOSFETs embedded in a test element group under zero bias voltage. This result suggests that the LTEM can be used not only for the defect localization in LSI failure analysis but also as in-line inspection and monitoring.
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