In-situ stage development for high-temperature X-ray nanocharacterization of defects in solar cells

S. Gangam, A. Jeffries, D. Fenning, B. Lai, J. Maser, T. Buonassisi, C. Honsberg, M. Bertoni
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Abstract

The vast majority of photovoltaic materials are highly sensitive to the presence of inhomogeneously distributed nanoscale defects, which commonly regulate the overall performance of the devices. The defects can take the form of impurities, stoichiometry variations, microstructural misalignments, and secondary phases - the majority of which are created during solar cell processing. Scientific understanding of these defects and development of defect-engineering techniques have the potential to significantly increase cell efficiencies, as well as provide a science-based approach to increase the competitiveness for the US PV industry on a dollar per installed kWh criterion. For the case of Cu(In, Ga)Se2 devices for example, the theoretically limit sits at 30.5% efficiency [1], thus, surpassing DOE's SunShot goals for cost-competitive solar power. However, to date, CIGS laboratory scale cells have been reported to achieve only 20.3% efficiencies and modules have not crossed the 15 % certified efficiency barrier. Recent reports have suggested that these record cells are limited by non-ideal recombination and, more specifically, by an increased saturation current that seems to originate from the particular defect chemistry at structural defects. In order to understand the severe efficiency limitations that currently affect solar cell materials, it is necessary to understand in detail the role of defects and their interactions under actual operating and processing conditions. In this work we propose to develop a high-temperature, in-situ stage for X-ray microscopes, with the capabilities of temperature and ambient control. Here, we provide insight into the design and preliminary testing at the Advanced Photon Source with beam sizes ≈100nm.
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太阳能电池中高温x射线纳米缺陷的原位阶段开发
绝大多数光伏材料对不均匀分布的纳米级缺陷高度敏感,这些缺陷通常会影响器件的整体性能。缺陷可以采取杂质、化学计量变化、微观结构失调和二次相的形式,其中大部分是在太阳能电池加工过程中产生的。对这些缺陷的科学理解和缺陷工程技术的发展有可能显著提高电池效率,并提供一种基于科学的方法来提高美国光伏产业在每安装千瓦时1美元标准上的竞争力。以Cu(In, Ga)Se2器件为例,理论上的极限是30.5%的效率[1],因此,超过了美国能源部的SunShot目标,具有成本竞争力的太阳能发电。然而,到目前为止,据报道,CIGS实验室规模的电池仅达到20.3%的效率,模块也没有超过15%的认证效率障碍。最近的报告表明,这些记录细胞受到非理想重组的限制,更具体地说,受到饱和电流增加的限制,饱和电流似乎源于结构缺陷处的特定缺陷化学。为了了解目前影响太阳能电池材料的严重效率限制,有必要详细了解缺陷的作用及其在实际操作和加工条件下的相互作用。在这项工作中,我们建议为x射线显微镜开发一个具有温度和环境控制能力的高温原位阶段。在这里,我们提供了对光束尺寸≈100nm的先进光子源的设计和初步测试的见解。
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