Comparison of two SiGe 2-stage E-band power amplifier architectures

Tobias Tired, H. Sjöland, Göran Jönsson, J. Wernehag
{"title":"Comparison of two SiGe 2-stage E-band power amplifier architectures","authors":"Tobias Tired, H. Sjöland, Göran Jönsson, J. Wernehag","doi":"10.1109/APCCAS.2016.7804085","DOIUrl":null,"url":null,"abstract":"This paper presents simulation and measurement results for two 2-stage E-band power amplifiers implemented in 0.18 μm SiGe technology with fr = 200 GHz. To increase the power gain by mitigating the effect of the base-collector capacitance, the first design uses a differential cascode topology with a 2.7 V supply voltage. The second design instead uses capacitive cross-coupling of a differential common emitter stage, previously not demonstrated in mm-wave SiGe PAs, and has a supply voltage of only 1.5 V. Low supply voltage is advantageous since a common supply can then be shared between the transceiver and the PA. To maximize the power gain and robustness, both designs use a transformer based interstage matching. The cascode design achieves a measured power gain, S21, of 16 dB at 92 GHz with 17 GHz 3-dB bandwidth, and a simulated saturated output power, Psat, of 17 dBm with a 16% peak PAE. The cross-coupled design achieves a measured S21 of 10 dB at 93 GHz with 16 GHz 3-dB bandwidth, and a simulated Psat, of 15 dBm with 16% peak PAE. Comparing the measured and simulated results for the two amplifier architectures, the cascode topology is more robust, while the cross-coupled topology would benefit from a programmable cross-coupling capacitance.","PeriodicalId":6495,"journal":{"name":"2016 IEEE Asia Pacific Conference on Circuits and Systems (APCCAS)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2016-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 IEEE Asia Pacific Conference on Circuits and Systems (APCCAS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/APCCAS.2016.7804085","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3

Abstract

This paper presents simulation and measurement results for two 2-stage E-band power amplifiers implemented in 0.18 μm SiGe technology with fr = 200 GHz. To increase the power gain by mitigating the effect of the base-collector capacitance, the first design uses a differential cascode topology with a 2.7 V supply voltage. The second design instead uses capacitive cross-coupling of a differential common emitter stage, previously not demonstrated in mm-wave SiGe PAs, and has a supply voltage of only 1.5 V. Low supply voltage is advantageous since a common supply can then be shared between the transceiver and the PA. To maximize the power gain and robustness, both designs use a transformer based interstage matching. The cascode design achieves a measured power gain, S21, of 16 dB at 92 GHz with 17 GHz 3-dB bandwidth, and a simulated saturated output power, Psat, of 17 dBm with a 16% peak PAE. The cross-coupled design achieves a measured S21 of 10 dB at 93 GHz with 16 GHz 3-dB bandwidth, and a simulated Psat, of 15 dBm with 16% peak PAE. Comparing the measured and simulated results for the two amplifier architectures, the cascode topology is more robust, while the cross-coupled topology would benefit from a programmable cross-coupling capacitance.
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
两种SiGe 2级e波段功率放大器架构的比较
本文给出了两个采用0.18 μm SiGe技术、fr = 200 GHz的2级e波段功率放大器的仿真和测量结果。为了通过减轻基极-集电极电容的影响来增加功率增益,第一种设计采用2.7 V电源电压的差分级联编码拓扑。第二种设计使用差分共发射极级的电容交叉耦合,以前没有在毫米波SiGe PAs中演示过,并且电源电压仅为1.5 V。低电源电压是有利的,因为一个公共电源可以在收发器和PA之间共享。为了最大限度地提高功率增益和稳健性,两种设计都使用了基于变压器的级间匹配。级联码设计实现了92 GHz时16db的测量功率增益S21和17 GHz 3db带宽,模拟饱和输出功率Psat为17dbm,峰值PAE为16%。交叉耦合设计实现了93 GHz时10db的实测S21和16 GHz 3db带宽,模拟Psat为15dbm,峰值PAE为16%。比较两种放大器结构的测量和模拟结果,级联结构的拓扑结构更加鲁棒,而交叉耦合拓扑结构则受益于可编程的交叉耦合电容。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
IoT and Blockchain: Technologies, Challenges, and Applications Teaching Practice Platform and Innovation Course Construction for Postgraduate Majoring in Electronics Information FPGA implementation of edge detection for Sobel operator in eight directions Analog integrated audio frequency synthesizer Analysis of non-ideal effects and electrochemical impedance spectroscopy of arrayed flexible NiO-based pH sensor
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1