{"title":"The noise of MOS magnetic microsensors structures","authors":"C. Panait, G. Caruntu","doi":"10.1109/SMICND.2008.4703370","DOIUrl":null,"url":null,"abstract":"The paper presents the results of research work regarding the analysis and optimization of magnetic microsensor structures realized in MOS integrated circuits technology. By assimilating the MOSFET channel of almost constant depth with a Hall plate, the results obtained for the conventional Hall plates have been extended to MOS-Hall plates. On the basis of adequate models there have been established the noise main characteristics for bipolar lateral magnetotransistor, where the current deflection effect is dominating. An analysis of the devices characteristics in respect with the channel geometry and the material features has therefore been achieved for the first time.","PeriodicalId":6406,"journal":{"name":"2008 IEEE International Conference on Semiconductor Electronics","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2008-12-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2008 IEEE International Conference on Semiconductor Electronics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SMICND.2008.4703370","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
The paper presents the results of research work regarding the analysis and optimization of magnetic microsensor structures realized in MOS integrated circuits technology. By assimilating the MOSFET channel of almost constant depth with a Hall plate, the results obtained for the conventional Hall plates have been extended to MOS-Hall plates. On the basis of adequate models there have been established the noise main characteristics for bipolar lateral magnetotransistor, where the current deflection effect is dominating. An analysis of the devices characteristics in respect with the channel geometry and the material features has therefore been achieved for the first time.
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