Influence of the Lateral Electrostatic Field on the Statistical Distribution of Charge Carriers in a Cylindrical Nanolayer of β-HgS

V. Harutyunyan
{"title":"Influence of the Lateral Electrostatic Field on the Statistical Distribution of Charge Carriers in a Cylindrical Nanolayer of β-HgS","authors":"V. Harutyunyan","doi":"10.4028/p-cvCm7E","DOIUrl":null,"url":null,"abstract":"Analytical expressions are obtained for the wave functions and the energy spectrum of charge carriers in the β-HgS nanolayer of a cylindrical core/shell/shell β-CdS/ β-HgS/ β-CdS nanocomposite in the presence of a strong lateral uniform electrostatic field. It is shown that, under the influence of an external field, the position of the chemical potential of the electron-hole subsystem at absolute zero shifts to the bottom of the conduction band of the sample. The displacement value is determined by the intensity of the external field and increases linearly with increasing field. The concentration, internal energy, and heat capacity of the electronic subsystem of the β-HgS layer in the presence of a field are compared with similar values in the absence of a field. Calculations show that under identical conditions, the presence of an external field leads to an increase in the carrier concentration, which in turn leads to an increase in the internal energy and heat capacity of the system of electrons and holes in the layer.","PeriodicalId":7271,"journal":{"name":"Advanced Materials Research","volume":"19 1","pages":"113 - 128"},"PeriodicalIF":0.0000,"publicationDate":"2023-07-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Advanced Materials Research","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.4028/p-cvCm7E","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

Abstract

Analytical expressions are obtained for the wave functions and the energy spectrum of charge carriers in the β-HgS nanolayer of a cylindrical core/shell/shell β-CdS/ β-HgS/ β-CdS nanocomposite in the presence of a strong lateral uniform electrostatic field. It is shown that, under the influence of an external field, the position of the chemical potential of the electron-hole subsystem at absolute zero shifts to the bottom of the conduction band of the sample. The displacement value is determined by the intensity of the external field and increases linearly with increasing field. The concentration, internal energy, and heat capacity of the electronic subsystem of the β-HgS layer in the presence of a field are compared with similar values in the absence of a field. Calculations show that under identical conditions, the presence of an external field leads to an increase in the carrier concentration, which in turn leads to an increase in the internal energy and heat capacity of the system of electrons and holes in the layer.
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
横向静电场对β-HgS圆柱形纳米层载流子统计分布的影响
得到了在强横向均匀静电场作用下圆柱形核/壳/壳β-CdS/ β-HgS/ β-CdS纳米复合材料β-HgS纳米层中载流子的波函数和能谱的解析表达式。结果表明,在外场作用下,电子空穴子系统在绝对零度的化学势位置向样品导带的底部移动。位移值由外场强度决定,并随场强的增大而线性增大。比较了有场存在时β-HgS层电子分系统的浓度、内能和热容与无场存在时的相似值。计算表明,在相同条件下,外场的存在导致载流子浓度的增加,载流子浓度的增加反过来又导致层中电子和空穴系统的内能和热容的增加。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
The Effect of Molar Ratio and Precipitation Time of Mg/Al Hydrotalcite Synthesis on the Isomerization of Glucose into Fructose Biomaterials and Structural Materials Solid Propellant Aging Detection Method Based on Impedance Spectroscopy Exploring the Potential of α-MnO2/ Carbon Nanotubes for Improved Oxygen Reduction Reaction Performance at the Cathode of Alkaline Fuel Cells Effect of Flame Remelting on the Microstructure, Wear and Corrosion Resistance of HVOF Sprayed NiCrBSi Coatings
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1