Hyun Yong Cho, Rameshwaram Sharma, Jeffrey D. Fogle
{"title":"Ultrapure chemical components for next generation materials","authors":"Hyun Yong Cho, Rameshwaram Sharma, Jeffrey D. Fogle","doi":"10.1109/CSTIC.2017.7919765","DOIUrl":null,"url":null,"abstract":"Ultrapure chemical components for next generation materials for semiconductor manufacture are required due to chip yield enhancement. Some components for photoresist, cross linker, monomer, and photo acid generator (PAG) can be provided as representative ultrapure chemical components which have below 10 ppb level ionic metal impurities by particular purification methods.","PeriodicalId":6846,"journal":{"name":"2017 China Semiconductor Technology International Conference (CSTIC)","volume":"20 1","pages":"1-3"},"PeriodicalIF":0.0000,"publicationDate":"2017-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 China Semiconductor Technology International Conference (CSTIC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CSTIC.2017.7919765","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
Ultrapure chemical components for next generation materials for semiconductor manufacture are required due to chip yield enhancement. Some components for photoresist, cross linker, monomer, and photo acid generator (PAG) can be provided as representative ultrapure chemical components which have below 10 ppb level ionic metal impurities by particular purification methods.
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