{"title":"Reference Voltage Generator for 80V GaN HEMT Gate Driver","authors":"Ningye He, De-Zhong Zhou, Li Wang, Yuan Xu, Xiaoxiong He, Zhenhai Chen","doi":"10.1109/ICICM54364.2021.9660339","DOIUrl":null,"url":null,"abstract":"Based on 0.18μm 80V BCD process, a reference voltage generator for GaN HEMT gate driver without high voltage low dropout regulator is designed, which is mainly composed of high-voltage bandgap reference and operational transconductance amplifier. It can achieve a low temperature coefficient with a wide supply voltage range from 5V to 80V in the temperature range from $-25^{\\circ}\\mathrm{C}$ to $100^{\\circ}\\mathrm{C}$ by curvature compensation technology. The simulated and measured results show that the function of the proposed reference voltage generator is correct, which can well meet the application requirements of 80V GaN HEMT gate driver.","PeriodicalId":6693,"journal":{"name":"2021 6th International Conference on Integrated Circuits and Microsystems (ICICM)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2021-10-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2021 6th International Conference on Integrated Circuits and Microsystems (ICICM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICICM54364.2021.9660339","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
Based on 0.18μm 80V BCD process, a reference voltage generator for GaN HEMT gate driver without high voltage low dropout regulator is designed, which is mainly composed of high-voltage bandgap reference and operational transconductance amplifier. It can achieve a low temperature coefficient with a wide supply voltage range from 5V to 80V in the temperature range from $-25^{\circ}\mathrm{C}$ to $100^{\circ}\mathrm{C}$ by curvature compensation technology. The simulated and measured results show that the function of the proposed reference voltage generator is correct, which can well meet the application requirements of 80V GaN HEMT gate driver.
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