Low operating voltage bistable memory characteristics of tellurium thin films

Abstract

The simple in-plane electrical measurements of tellurium (Te) thin films, of thicknesses 8,10, 15 and 20 nm on SiO2/Si substrates, revealed strong switching characteristics at voltages less than 2V. The films exhibited clear read-write-erase (rewritable) bipolar memory behavior. The maximum ON/OFF ratio of about 104 to 105 was obtained for 10 and 15 nm thick films. Surface morphology of the thin films, investigated using scanning electron microscopy (SEM), revealed hexagonal structures with grain boundaries. These grain boundaries were suggested to be causing charge carrier trapping in Te films and hence the switching characteristics. Stable cyclic switching and good retention characteristics were demonstrated.The simple in-plane electrical measurements of tellurium (Te) thin films, of thicknesses 8,10, 15 and 20 nm on SiO2/Si substrates, revealed strong switching characteristics at voltages less than 2V. The films exhibited clear read-write-erase (rewritable) bipolar memory behavior. The maximum ON/OFF ratio of about 104 to 105 was obtained for 10 and 15 nm thick films. Surface morphology of the thin films, investigated using scanning electron microscopy (SEM), revealed hexagonal structures with grain boundaries. These grain boundaries were suggested to be causing charge carrier trapping in Te films and hence the switching characteristics. Stable cyclic switching and good retention characteristics were demonstrated.