Amorphous Antimony in Thin Films

D. StyrkasA.
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Abstract

Polarization curves i were removed galvanostatically in an inert gas atmosphere with stirring against a saturated cacalomel reference electrode. Cathode – Pt polished plate area 1sm 2 , all  related to normal hydrogen. Analysis – amperometric titration by [2]. The cathode space was separated from the anode from anodic porous partitions. The current output was determined by weighing the cathode. Total Q passing through the cell, electricity controlled copper Q-meter with a solution of Eitel. Reflectance R of films was measured on a GOI reflectometer with Se photocell, vacuum deposition was carried out at specified distances from the crucible with Sb heated by a spiral from W to substrates of transparent polished SiO2 for adhesion, the Color of the amorphous film treated with a weak solution of SnCl2and its transition to a brilliant α Sb Was noted visually. The electrical conductivity of the film during the transition from amorphous to crystalline state changed ~ 500 times.
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薄膜中的非晶锑
极化曲线i在惰性气体气氛中通过对饱和钙甘汞参比电极的搅拌以恒流除去。阴极-铂抛光板面积1m2,所有与正常氢有关。分析。[2]安培滴定法。阴极空间通过阳极多孔隔板与阳极分离。电流输出是通过称量阴极来确定的。总Q通过电池,用电控制铜Q计与艾特尔溶液。用带Se光电池的GOI反射率计测量了薄膜的反射率R,在距离坩埚一定距离处用W螺旋式加热Sb到透明的抛光SiO2衬底上进行真空沉积,并观察了sncl2弱溶液处理后非晶膜的颜色和向明亮的α Sb的转变。薄膜的电导率在从无定形到晶态的转变过程中变化了约500倍。
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