28nm CPI (Chip/Package Interactions) in Large Size eWLB (Embedded Wafer Level BGA) Fan-Out Wafer Level Packages

Kang Chen, Linda Chua, Won Kyung Choi, Seng Guan Chow, S. Yoon
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引用次数: 8

Abstract

To meet the continued demand for form factor reduction and functional integration of electronic devices, Wafer Level Packaging (WLP) is an attractive packaging solution with many advantages in comparison with standard Ball Grid Array (BGA) packages. The advancement of fan-out WLP has made it a more promising solution as compared with fan-in WLP, because it can offer greater flexibility in enabling more IO's, multi-chips, heterogeneous integration and 3D SiP. In particular, Embedded Wafer Level BGA (eWLB) is a fan-out WLP solution which can enable applications that require higher input/output (I/O) density, smaller form factor, excellent heat dissipation, and thin package profile, and it has the potential to evolve in various configurations with proven integration flexibility, process robustness, manufacturing capacity and production yield. It also provides integration of multiple dies vertically and horizontally in a single package without substrates. For eWLB fan-out WLP, the structural design as well as selection of materials is very important in determining the process yield and long term reliability. Therefore it is necessary to investigate the key design factors affecting the reliability comprehensively. This work is focused on an experimental study on the chip-package interactions in 10x10~15x15mm 28nm eWLB fan-out WLP with multiple redistribution layers (RDLs). Standard JEDEC component and board level tests were carried out to investigate reliability, and both destructive and non-destructive analyses were performed to investigate potential structural defects. Electrical characterization was also studied for both simulation and experimental works. The influence of structural design on the package reliability will be demonstrated. Thermal characterization and thermo-mechanical simulation results will also be discussed.
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大尺寸eWLB(嵌入式晶圆级BGA)扇出晶圆级封装中的28nm CPI(芯片/封装相互作用)
为了满足电子器件外形尺寸减小和功能集成的持续需求,晶圆级封装(WLP)是一种有吸引力的封装解决方案,与标准球栅阵列(BGA)封装相比,它具有许多优势。与扇入式WLP相比,扇出式WLP的进步使其成为更有前途的解决方案,因为它可以提供更大的灵活性,支持更多的IO,多芯片,异构集成和3D SiP。特别是,嵌入式晶圆级BGA (eWLB)是一种扇形输出的WLP解决方案,可以实现需要更高输入/输出(I/O)密度、更小的外形、出色的散热和更薄的封装外形的应用,并且它具有在各种配置中发展的潜力,具有成熟的集成灵活性、工艺稳稳性、制造能力和生产良率。它还可以在没有基板的情况下在单个封装中垂直和水平集成多个模具。对于eWLB扇出式WLP,结构设计和材料选择对工艺良率和长期可靠性的影响非常重要。因此,有必要对影响可靠性的关键设计因素进行综合研究。本文主要研究了10x10~15x15mm 28nm具有多重分布层(RDLs)的eWLB扇出WLP中芯片封装相互作用的实验研究。进行了标准JEDEC组件和板级测试以调查可靠性,并进行了破坏性和非破坏性分析以调查潜在的结构缺陷。并对电特性进行了仿真和实验研究。分析了结构设计对封装可靠性的影响。热表征和热力学模拟结果也将讨论。
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