Md. Iktiham Bin Taher, Y. Halfaya, R. Alrammouz, M. Lazerges, A. Randi, T. Moudakir, N. Sama, Thomas Guermont, Nicolas Pelissier, T. Pichler, M. Piedevache, J. Pironon, S. Gautier
{"title":"High electron mobility transistor-based hydrogen sensor using ITO as a sensing layer","authors":"Md. Iktiham Bin Taher, Y. Halfaya, R. Alrammouz, M. Lazerges, A. Randi, T. Moudakir, N. Sama, Thomas Guermont, Nicolas Pelissier, T. Pichler, M. Piedevache, J. Pironon, S. Gautier","doi":"10.1109/SENSORS47087.2021.9639820","DOIUrl":null,"url":null,"abstract":"Gas sensors based on AlGaN/GaN high-electron-mobility transistors (HEMTs) with indium tin oxide (ITO) gates as functional layers were fabricated to detect hydrogen gas. Several sensing metrics such as the changes in current, sensitivity, and response time confirmed the dependence of the sensing response on the gas concentration.","PeriodicalId":6775,"journal":{"name":"2021 IEEE Sensors","volume":"38 1","pages":"1-4"},"PeriodicalIF":0.0000,"publicationDate":"2021-10-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2021 IEEE Sensors","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SENSORS47087.2021.9639820","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
Gas sensors based on AlGaN/GaN high-electron-mobility transistors (HEMTs) with indium tin oxide (ITO) gates as functional layers were fabricated to detect hydrogen gas. Several sensing metrics such as the changes in current, sensitivity, and response time confirmed the dependence of the sensing response on the gas concentration.
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