{"title":"Finding the average GaAs MESFET among the spreads","authors":"Adrian Hill, John Bridge, Peter Ladbrooke","doi":"10.1016/0959-3527(90)90172-P","DOIUrl":null,"url":null,"abstract":"<div><p>FET-based MMICs and MICs are usually designed around a fixed FET which is intended to be typical of the process which it represents. This article addresses the question of whether the electrical characteristics of a technologically mean device are the same as those of devices obtained by averaging the electrical characteristics of several different devices.</p></div>","PeriodicalId":100494,"journal":{"name":"Euro III-Vs Review","volume":"3 6","pages":"Pages 16-18"},"PeriodicalIF":0.0000,"publicationDate":"1990-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/0959-3527(90)90172-P","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Euro III-Vs Review","FirstCategoryId":"1085","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/095935279090172P","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
FET-based MMICs and MICs are usually designed around a fixed FET which is intended to be typical of the process which it represents. This article addresses the question of whether the electrical characteristics of a technologically mean device are the same as those of devices obtained by averaging the electrical characteristics of several different devices.
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