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Plessey GaAs lives on -
Euro III-Vs Review
Pub Date : 1990-11-01 DOI: 10.1016/0959-3527(90)90174-R
Jim Turner MBE, David Smith

The Plessey GaAs Foundry Process is based on proven, reliable technology with the greatest emphasis placed on manufacturability, reproducibility and yield. Since the introduction of commercial processes in 1985, Plessey has maintained a policy of enhancement and updating rather than replacement as new processes become available. For example, usable frequency limits have been pushed from 12GHz to 14GHz and now to 20GHz with 0.5μm technology and via holes. This policy will continue in the future. Advanced processes have been developed, for example, for the generation of many watts of mean power from a MMIC. A HEMT has also been demonstrated and this will form the core technology for the forthcoming Plessey F40 process which will operate at 40GHz.

Plessey GaAs铸造工艺基于成熟可靠的技术，最强调的是可制造性，可重复性和良率。自1985年引入商业流程以来，Plessey一直保持着增强和更新的政策，而不是随着新流程的出现而替换。例如，可用的频率限制已经从12GHz推到了14GHz，现在通过0.5μm技术和通孔推到了20GHz。这一政策将在未来继续实施。先进的工艺已经被开发出来，例如，从MMIC产生许多瓦的平均功率。HEMT也进行了演示，这将构成即将推出的Plessey F40工艺的核心技术，该工艺将在40GHz工作。
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引用次数: 1
Finding the average GaAs MESFET among the spreads 在分布中找到平均的GaAs MESFET
Euro III-Vs Review
Pub Date : 1990-11-01 DOI: 10.1016/0959-3527(90)90172-P
Adrian Hill, John Bridge, Peter Ladbrooke

FET-based MMICs and MICs are usually designed around a fixed FET which is intended to be typical of the process which it represents. This article addresses the question of whether the electrical characteristics of a technologically mean device are the same as those of devices obtained by averaging the electrical characteristics of several different devices.

基于FET的mmic和mic通常是围绕一个固定的FET设计的，这个FET是它所代表的典型过程。本文解决的问题是，技术上平均的设备的电气特性是否与通过平均几个不同设备的电气特性获得的设备的电气特性相同。
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引用次数: 0
Microfabrication using focused ion beams part II 聚焦离子束微细加工。第二部分
Euro III-Vs Review
Pub Date : 1990-11-01 DOI: 10.1016/0959-3527(90)90183-T
Kenji Gamo, Susumu Namba

Soon all semiconductor devices could be made this way is a claim often made for focused ion beam technology. As the Osaka University team relates in this overview, numerous labs around the world have used FIB to dope, deposit, etch and define semiconductor and other films to microfabricate circuits and devices. FIB has yet to become a routine method but the techniques under this banner hold much promise for the production of next generation devices.

很快，所有的半导体设备都可以用这种方式制造，这是聚焦离子束技术经常提出的要求。正如大阪大学团队在本概述中所述，世界各地的许多实验室已经使用FIB来掺杂，沉积，蚀刻和定义半导体和其他薄膜，以微制造电路和设备。FIB尚未成为一种常规方法，但在这种旗帜下的技术对下一代设备的生产大有希望。
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引用次数: 2
America's digital strategy 美国的数字战略
Euro III-Vs Review
Pub Date : 1990-11-01 DOI: 10.1016/0959-3527(90)90171-O
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引用次数: 0
The State of the GaAs market GaAs市场现状
Euro III-Vs Review
Pub Date : 1990-11-01 DOI: 10.1016/0959-3527(90)90176-T
Dennis Powers

The GaAs industry has developed into a viable, profitable industry with excellent growth potential, (much as TriQuint predicted five years ago). GaAs today is accepted by designers as a process with risks similar to state-of-the-art silicon. The fear, uncertainty and doubt have declined significantly in the past year or two, and GaAs is now competing with silicon technology strictly on a performance/price basis.

GaAs行业已经发展成为一个可行的、有利可图的、具有良好增长潜力的行业(就像TriQuint五年前预测的那样)。今天，GaAs被设计师们接受为一种具有与最先进的硅类似风险的工艺。在过去的一两年里，恐惧、不确定性和怀疑已经大大减少，GaAs现在正严格地在性能/价格的基础上与硅技术竞争。
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引用次数: 0
Advertiser's index 广告商的索引
Euro III-Vs Review
Pub Date : 1990-11-01 DOI: 10.1016/0959-3527(90)90185-V
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引用次数: 0
Teaching the teachers 教老师
Euro III-Vs Review
Pub Date : 1990-11-01 DOI: 10.1016/0959-3527(90)90181-R
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引用次数: 0
1990 GaAs IC symposium sheraton New Orleans hotel exhibition hall floorplan 1990年GaAs集成电路研讨会新奥尔良喜来登酒店展厅平面图
Euro III-Vs Review
Pub Date : 1990-11-01 DOI: 10.1016/0959-3527(90)90177-U
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引用次数: 0
A normally-off process for analogue/digital GaAs ASICs 用于模拟/数字GaAs asic的正常关闭过程
Euro III-Vs Review
Pub Date : 1990-11-01 DOI: 10.1016/0959-3527(90)90178-V
Didier Meignant

An enhancement mode process developed by Philips Research Labs is available through foundry service at Philips Microwave Limeil. This process is meant to address not only purely digital circuits, but also low-cost, ultra low power analogue and analogue-digital mixed functions with high integration density. In this article, an integrated GPS front-end, designed and fabricated by PNL/LEP, is described. This 3-chip receiver includes an integrated VCO, amplifiers, a mixer, a phase frequency comparator, a 2-bit ADC, registers and several prescalers. The outstanding performance measured on this system is believed to lead to a drastic price reduction of the RF receiver, compared with an hybrid implementation.

飞利浦研究实验室开发的一种增强模式工艺可通过飞利浦微波Limeil的铸造服务获得。该工艺不仅适用于纯数字电路，而且适用于低成本、超低功耗、高集成度的模拟和模数混合功能。本文介绍了一种采用PNL/LEP技术设计制作的GPS集成前端系统。这个3芯片接收器包括一个集成的VCO，放大器，混频器，相位频率比较器，2位ADC，寄存器和几个预量器。与混合实现相比，该系统的出色性能被认为会导致射频接收器的价格大幅降低。
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引用次数: 2
Diary 日记
Euro III-Vs Review
Pub Date : 1990-11-01 DOI: 10.1016/0959-3527(90)90184-U
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引用次数: 0
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