Commercial Production of Epitaxial PZT for Piezoelectric MEMS Applications

Ryoma Miyake, M. Kiuchi, S. Yoshida, Shuji Tanaka, G. Fox
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引用次数: 1

Abstract

A commercially produced monocrystalline-like epitaxial PZT film is described for piezoelectric MEMS applications. Films with a thickness of $1\ \mu \mathrm{m}$ to $2\ \mu \mathrm{m}$ exhibit a typical transverse piezoelectric d31 coefficient of −185 pm/V, relative dielectric permittivity of 430 and dielectric loss of 0.015. These films are commercially available for piezoelectric MEMS device development and production.
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用于压电MEMS的外延PZT的商业化生产
描述了一种用于压电MEMS应用的商业生产的单晶样外延PZT薄膜。厚度为$1\ \mu \ mathm {m}$至$2\ \mu \ mathm {m}$的薄膜,典型的横向压电d31系数为- 185 pm/V,相对介电常数为430,介电损耗为0.015。这些薄膜可用于压电MEMS器件的开发和生产。
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