C. Chevallier, C. Siau, S. Lim, Srivalli Namala, M. Matsuoka, B. Bateman, D. Rinerson
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引用次数: 89
Abstract
A number of technologies have been proposed to replace NAND Flash as scaling becomes more difficult [1–2]. One promising area includes resistive memories using the conductive metal oxide (CMOx™) technology where multiple memory layers can be stacked [3]. Earlier attempts have been made with non-rewritable materials [4]. The key concepts for a very high density, multi physical layer nonvolatile, rewritable memory have been developed on a 64Mb, 130 nm test chip.
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