Numerical model with competitively adsorptive mechanism for copper electrodeposition of TSV

Jie Shen, Wei-Xiong Luo, Wenhao Dong, Ming Li, Liming Gao
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引用次数: 1

Abstract

The competitive adsorption between suppressor and accelerator is the crucial behavior to achieve void-free filling of TSV during electrodeposition. Convective velocity and potential on the reactive electrode surface are two important factors for adsorption of additives. In this paper, a method of calculating the competitively adsorptive parameter Kads is found to quantize the effect of these factors based on investigating the distribution of potential and convective velocity in via. And a special competitively adsorptive parameter value as threshold value K0 is defined to estimate which represents the leading function between suppressor and accelerator in competitive adsorption, and the value of K0 is calculated as 1.631×10-7m/s. Furthermore, TSV filling model with diverse diameter is built, and the simulation results are consistent with that of experiment.
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TSV铜电沉积竞争吸附机理的数值模型
抑制剂和促进剂之间的竞争吸附是电沉积过程中实现TSV无空隙填充的关键行为。反应电极表面的对流速度和电势是影响添加剂吸附的两个重要因素。本文在考察通孔中势和对流速度分布的基础上,提出了一种计算竞争吸附参数Kads的方法,以量化这些因素的影响。并定义了一个特殊的竞争吸附参数值作为阈值K0来估计它代表了竞争吸附中抑制因子和促进因子之间的主导作用,K0的值计算为1.631×10-7m/s。建立了不同直径的TSV充填模型,仿真结果与实验结果吻合较好。
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