Pub Date : 2018-10-01DOI: 10.1109/icept.2016.7583313
J. van der Voort, G. van der Beek, Berend van der Grinten
Liteq is dedicated to bring Lithographic solutions to the Advanced Packaging market. The company has a strong background in different application markets and is now fully focusing on Advanced Packaging. Liteq has developed a lithographic system for the Advanced Packaging market starting with the specific requirements of this market in mind, unlike other lithography providers that modified existing systems resulting in solutions with lots of compromises. Liteq has its home base in Eindhoven, the Netherlands and is strongly embedded in the Brainport Ecosystem where leading OEM's like ASML, FEI and Philips Healthcare are located. Liteq is a private company with long term committed investors.
{"title":"Unlocking the full potential of Lithography for Advanced Packaging","authors":"J. van der Voort, G. van der Beek, Berend van der Grinten","doi":"10.1109/icept.2016.7583313","DOIUrl":"https://doi.org/10.1109/icept.2016.7583313","url":null,"abstract":"Liteq is dedicated to bring Lithographic solutions to the Advanced Packaging market. The company has a strong background in different application markets and is now fully focusing on Advanced Packaging. Liteq has developed a lithographic system for the Advanced Packaging market starting with the specific requirements of this market in mind, unlike other lithography providers that modified existing systems resulting in solutions with lots of compromises. Liteq has its home base in Eindhoven, the Netherlands and is strongly embedded in the Brainport Ecosystem where leading OEM's like ASML, FEI and Philips Healthcare are located. Liteq is a private company with long term committed investors.","PeriodicalId":6881,"journal":{"name":"2016 17th International Conference on Electronic Packaging Technology (ICEPT)","volume":"30 1","pages":"1079-1084"},"PeriodicalIF":0.0,"publicationDate":"2018-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85227354","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-10-04DOI: 10.1109/ICEPT.2016.7583125
Qiwen Zhu, Pu Zhang, Shuna Wang, Dihai Wu, Zhiqiang Nie, Lingling Xiong, Yunfei Song, Xingsheng Liu
With the improvement of performance and reliability, high power semiconductor lasers have been widely applied in more and more fields. Thermal management is one of the most important issues effecting the optical-electrical performance of high power semiconductor laser. Compared with liquid-cooled techniques, conduction-cooled techniques have many advantages in some special applications because it could be adaptable for extreme environments, such as high temperature and low temperature. In this paper, a compact quasi-continuous wave (QCW) conduction-cooled high power semiconductor laser array was studied. The thermal behavior of the conduction-cooled semiconductor laser array with different structure and operation parameters were carried out using finite element method (FEM). The structure parameters of G-Stack semiconductor laser array was presented and optimized. Finally, A high power semiconductor laser array with superior performance was fabricated and characterized.
{"title":"A compact QCW conduction-cooled high power semiconductor laser array","authors":"Qiwen Zhu, Pu Zhang, Shuna Wang, Dihai Wu, Zhiqiang Nie, Lingling Xiong, Yunfei Song, Xingsheng Liu","doi":"10.1109/ICEPT.2016.7583125","DOIUrl":"https://doi.org/10.1109/ICEPT.2016.7583125","url":null,"abstract":"With the improvement of performance and reliability, high power semiconductor lasers have been widely applied in more and more fields. Thermal management is one of the most important issues effecting the optical-electrical performance of high power semiconductor laser. Compared with liquid-cooled techniques, conduction-cooled techniques have many advantages in some special applications because it could be adaptable for extreme environments, such as high temperature and low temperature. In this paper, a compact quasi-continuous wave (QCW) conduction-cooled high power semiconductor laser array was studied. The thermal behavior of the conduction-cooled semiconductor laser array with different structure and operation parameters were carried out using finite element method (FEM). The structure parameters of G-Stack semiconductor laser array was presented and optimized. Finally, A high power semiconductor laser array with superior performance was fabricated and characterized.","PeriodicalId":6881,"journal":{"name":"2016 17th International Conference on Electronic Packaging Technology (ICEPT)","volume":"33 1","pages":"227-233"},"PeriodicalIF":0.0,"publicationDate":"2016-10-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"75198776","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-10-04DOI: 10.1109/ICEPT.2016.7583183
Dihai Wu, Pu Zhang, Zhiqiang Nie, Lingling Xiong, Yunfei Song, Qiwen Zhu, Yao Lu, Yifan Dang, Xingsheng Liu
Heat generation in the active region leads to high junction temperature that significantly affects electrical and optical properties, reliability and lifetime of high power diode laser arrays. It is of great importance to understand the thermal behavior to improve the devices. Compared to conduction cooling techniques, diode laser arrays packaged on microchannel heat sinks have superior capability to dissipate the large amount of heat so as to deliver higher output power and ensure high reliability. In this paper, numerical approach based on finite element method (FEM) and computational fluid dynamics (CFD) was employed to investigate thermal properties of microchannel cooled (MCC) high power diode laser arrays. The static and transient thermal behavior of the devices operated in continuous wave (CW) mode at different water flow rates have been studied in detail. The thermal resistance contributed from the laser chip, solder interface and MCC heat sink was revealed. The correlation between thermal resistance and water flow rate was analyzed. The thermal time constants were derived to characterize the three distinct heating processes related to active region, copper heat sink and copper/water interface. Non-uniformity of junction temperature across the diode laser array was discussed by thermal crosstalk employing the independent emitter analysis. Understanding thermal phenomena in diode laser arrays could offer useful guidelines in optimizing the operating conditions, MCC heat sink structures and packaging architectures for enhanced performance and reliability.
{"title":"Thermal behavior of microchannel cooled high power diode laser arrays","authors":"Dihai Wu, Pu Zhang, Zhiqiang Nie, Lingling Xiong, Yunfei Song, Qiwen Zhu, Yao Lu, Yifan Dang, Xingsheng Liu","doi":"10.1109/ICEPT.2016.7583183","DOIUrl":"https://doi.org/10.1109/ICEPT.2016.7583183","url":null,"abstract":"Heat generation in the active region leads to high junction temperature that significantly affects electrical and optical properties, reliability and lifetime of high power diode laser arrays. It is of great importance to understand the thermal behavior to improve the devices. Compared to conduction cooling techniques, diode laser arrays packaged on microchannel heat sinks have superior capability to dissipate the large amount of heat so as to deliver higher output power and ensure high reliability. In this paper, numerical approach based on finite element method (FEM) and computational fluid dynamics (CFD) was employed to investigate thermal properties of microchannel cooled (MCC) high power diode laser arrays. The static and transient thermal behavior of the devices operated in continuous wave (CW) mode at different water flow rates have been studied in detail. The thermal resistance contributed from the laser chip, solder interface and MCC heat sink was revealed. The correlation between thermal resistance and water flow rate was analyzed. The thermal time constants were derived to characterize the three distinct heating processes related to active region, copper heat sink and copper/water interface. Non-uniformity of junction temperature across the diode laser array was discussed by thermal crosstalk employing the independent emitter analysis. Understanding thermal phenomena in diode laser arrays could offer useful guidelines in optimizing the operating conditions, MCC heat sink structures and packaging architectures for enhanced performance and reliability.","PeriodicalId":6881,"journal":{"name":"2016 17th International Conference on Electronic Packaging Technology (ICEPT)","volume":"1 1","pages":"499-505"},"PeriodicalIF":0.0,"publicationDate":"2016-10-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90323491","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-08-01DOI: 10.1109/ICEPT.2016.7583168
Haoran Ma, Anil Kunwar, Z. Meng, Bingfeng Guo, N. Zhao, Haitao Ma
As bubbles on the solder/copper interface can seriously decrease the joint reliability of lead-free soldering in electronic packaging industry, the research of interfacial bubbles is extremely imperative. In the local area around an interfacial bubble, the Cu atoms tend to migrate towards the gas/solid interface, providing the copper element to form the interfacial intermetallic compounds (IMCs). Because of the different thermal conductivity inside and outside the void (inside gas lower than outside solid), the bubble interface will have a disparate temperature gradient comparing with the solid area around the bubble. Based on this, the morphology variation of IMCs on the solder/bubble interface under various soldering temperatures and cooling rates was investigated in this study, using the scanning electron microscope (SEM) for the cross section each time after the soldering reaction part carried out in furnace with the soldering temperature of 250°C, 300°C, 350°C and holding time of 60s, followed by water, air, furnace cooling (WC, AC, FC). It was found that, IMCs are much more easily to exist on the bubble interface, especially the position including some small holes due to the higher concentration of metal atoms brought by them; On the other hand, most of the bubble interface will have no well-formed IMCs if no small voids sticking to when the cooling rate is high. In a certain soldering temperature, with the cooling rate declining (WC>AC>FC), the morphology of the interfacial IMCs gradually change from solid to hollow structure due to different growth rates of two vertical growing orientation inside the new formed phase. In addition, when the soldering temperature improved, the volume ratio of the cavity part in the hollow structure will reduce gradually.
{"title":"The morphology variation of IMC on the solder/bubble interface under different cooling rates and temperatures","authors":"Haoran Ma, Anil Kunwar, Z. Meng, Bingfeng Guo, N. Zhao, Haitao Ma","doi":"10.1109/ICEPT.2016.7583168","DOIUrl":"https://doi.org/10.1109/ICEPT.2016.7583168","url":null,"abstract":"As bubbles on the solder/copper interface can seriously decrease the joint reliability of lead-free soldering in electronic packaging industry, the research of interfacial bubbles is extremely imperative. In the local area around an interfacial bubble, the Cu atoms tend to migrate towards the gas/solid interface, providing the copper element to form the interfacial intermetallic compounds (IMCs). Because of the different thermal conductivity inside and outside the void (inside gas lower than outside solid), the bubble interface will have a disparate temperature gradient comparing with the solid area around the bubble. Based on this, the morphology variation of IMCs on the solder/bubble interface under various soldering temperatures and cooling rates was investigated in this study, using the scanning electron microscope (SEM) for the cross section each time after the soldering reaction part carried out in furnace with the soldering temperature of 250°C, 300°C, 350°C and holding time of 60s, followed by water, air, furnace cooling (WC, AC, FC). It was found that, IMCs are much more easily to exist on the bubble interface, especially the position including some small holes due to the higher concentration of metal atoms brought by them; On the other hand, most of the bubble interface will have no well-formed IMCs if no small voids sticking to when the cooling rate is high. In a certain soldering temperature, with the cooling rate declining (WC>AC>FC), the morphology of the interfacial IMCs gradually change from solid to hollow structure due to different growth rates of two vertical growing orientation inside the new formed phase. In addition, when the soldering temperature improved, the volume ratio of the cavity part in the hollow structure will reduce gradually.","PeriodicalId":6881,"journal":{"name":"2016 17th International Conference on Electronic Packaging Technology (ICEPT)","volume":"26 1","pages":"425-428"},"PeriodicalIF":0.0,"publicationDate":"2016-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"73481220","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-08-01DOI: 10.1109/ICEPT.2016.7583286
S. Liang, C. Ke, Min-bo Zhou, Xin-Ping Zhang
Thermomigration issue has attracted increasing attention as it can induce the failure of solder interconnects, owing to the migration of atoms driven by heat flux. Further, thermomigration can promote the formation of microvoids, and also induces the evolution and migration of many other types of microvoids in solder interconnects, resulting in loss of the integrity of solder interconnects and a dramatic decrease of the reliability, in particular for the solder interconnects under high temperature gradient. In this paper, a phase field model is developed and employed to simulate the evolution and migration behavior of microvoids in solder interconnects under the applied temperature gradient. Simulations take into account the coupled effect of surface diffusion and temperature gradient, and the feasibility and validity of this method are confirmed. The results show that for the solder interconnect containing an initially circular void in microscale, the microvoid migrates to the cold regions along the temperature gradient. In addition, under a higher temperature gradient, the microvoid migrates with higher speed and its shape becomes unstable, which will increase the potential of failure in solder interconnects. Moreover, the temperature gradient can drive two microvoids to migrate and coalesce to a large micorvoid, and eventually a slit-like void is formed. Finally, the microvoid migration kinetics is also investigated, and the result is consistent with the analytical solution.
{"title":"Phase field simulation of morphological evolution and migration of the microvoid in small scale solder interconnects driven by temperature gradient","authors":"S. Liang, C. Ke, Min-bo Zhou, Xin-Ping Zhang","doi":"10.1109/ICEPT.2016.7583286","DOIUrl":"https://doi.org/10.1109/ICEPT.2016.7583286","url":null,"abstract":"Thermomigration issue has attracted increasing attention as it can induce the failure of solder interconnects, owing to the migration of atoms driven by heat flux. Further, thermomigration can promote the formation of microvoids, and also induces the evolution and migration of many other types of microvoids in solder interconnects, resulting in loss of the integrity of solder interconnects and a dramatic decrease of the reliability, in particular for the solder interconnects under high temperature gradient. In this paper, a phase field model is developed and employed to simulate the evolution and migration behavior of microvoids in solder interconnects under the applied temperature gradient. Simulations take into account the coupled effect of surface diffusion and temperature gradient, and the feasibility and validity of this method are confirmed. The results show that for the solder interconnect containing an initially circular void in microscale, the microvoid migrates to the cold regions along the temperature gradient. In addition, under a higher temperature gradient, the microvoid migrates with higher speed and its shape becomes unstable, which will increase the potential of failure in solder interconnects. Moreover, the temperature gradient can drive two microvoids to migrate and coalesce to a large micorvoid, and eventually a slit-like void is formed. Finally, the microvoid migration kinetics is also investigated, and the result is consistent with the analytical solution.","PeriodicalId":6881,"journal":{"name":"2016 17th International Conference on Electronic Packaging Technology (ICEPT)","volume":"60 1","pages":"953-957"},"PeriodicalIF":0.0,"publicationDate":"2016-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"73545818","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-08-01DOI: 10.1109/ICEPT.2016.7583127
Yongjun Pan, F. Zhu, Xinxin Lin, Jiaquan Tao, Liping He, Han Wang, Sheng Liu
Wire bonding is one of the most important processes which connected the die and lead frame in LED packaging. Compared with other interconnect technology, wire bonding is much easier to be accomplished. Nevertheless, the gradual increased price of gold makes the cost of bonding increased. As a substitute material of gold, copper comes into sight. Its electrical conductivity is 30% higher than gold with a much lower price. However, the high Young's modulus of copper causes a series trouble, such as larger deformation in the pad and high stress transferred to chip which could result in damage of the chip below. A transient non-linear dynamic finite element model is introduced to simulate the first bond process in this paper for optimizing bonding parameters. The structure of analysis model based on the third generation LED chip. The diameter of copper and gold wire is both 25μm for comparison. Three main bonding results are discussed in this research to improve the reliability of copper wire bonding during the first bonding stage, they are bonding time, bonding force and splash on the bond pad. The stress transferred from FAB to sapphire substrate was also compared during copper wire and gold wire first bonding stage. At the end of this paper, a series of reasonable suggestions for optimizing copper wire bonding process were presented.
{"title":"Comparing the copper and gold wire bonding during thermalsonic wire bonding process","authors":"Yongjun Pan, F. Zhu, Xinxin Lin, Jiaquan Tao, Liping He, Han Wang, Sheng Liu","doi":"10.1109/ICEPT.2016.7583127","DOIUrl":"https://doi.org/10.1109/ICEPT.2016.7583127","url":null,"abstract":"Wire bonding is one of the most important processes which connected the die and lead frame in LED packaging. Compared with other interconnect technology, wire bonding is much easier to be accomplished. Nevertheless, the gradual increased price of gold makes the cost of bonding increased. As a substitute material of gold, copper comes into sight. Its electrical conductivity is 30% higher than gold with a much lower price. However, the high Young's modulus of copper causes a series trouble, such as larger deformation in the pad and high stress transferred to chip which could result in damage of the chip below. A transient non-linear dynamic finite element model is introduced to simulate the first bond process in this paper for optimizing bonding parameters. The structure of analysis model based on the third generation LED chip. The diameter of copper and gold wire is both 25μm for comparison. Three main bonding results are discussed in this research to improve the reliability of copper wire bonding during the first bonding stage, they are bonding time, bonding force and splash on the bond pad. The stress transferred from FAB to sapphire substrate was also compared during copper wire and gold wire first bonding stage. At the end of this paper, a series of reasonable suggestions for optimizing copper wire bonding process were presented.","PeriodicalId":6881,"journal":{"name":"2016 17th International Conference on Electronic Packaging Technology (ICEPT)","volume":"38 1","pages":"240-243"},"PeriodicalIF":0.0,"publicationDate":"2016-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"73840239","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-08-01DOI: 10.1109/ICEPT.2016.7583289
Jia-Qiang Huang, Min-bo Zhou, Xin-Ping Zhang
In order to reduce the cost of solder materials and retard the thermal shock of temperature-sensitive electronic components during packaging process, SnBi solder paste was explored to replace SnAgCu solder paste due to the low melting temperature. In this study, BGA structure Cu/solder-ball/solder-paste/Cu joints were designed and prepared to study the interfacial reactions and microstructural evolution of the mixed assembly joints, by using homogenous Sn3.0Ag0.5Cu (SAC305) and Sn-58Bi (SnBi) solders in the forms of both ball and paste, during isothermal aging. Results show that microstructural coarsening occurs in Cu/SAC305-ball/SnBi-paste/Cu, Cu/SAC305-ball/SAC305-paste/Cu and Cu/SnBi-ball/SnBi-paste/Cu joints and the thicknesses of interfacial IMCs increase with prolonging the isothermal aging time. Crack may form in the fusion region between the SnAgCu and SnBi-SnAgCu mixed solders in Cu/SAC305/SnBi/Cu joints after aging at 125 °C for 150 h due to the difference in coefficient of thermal expansion (CTE) between the SAC305 and SnBi solders, which may significantly weaken the reliability of mixed assembly joints. Moreover, in the solder matrix of Cu/SAC305/SnBi/Cu joints, a large amount of bulk Cu6Sn5 phase exists due to the limited solubility of Cu in the SnBi matrix. In addition, the growth of interfacial IMC layer at both solder-ball/Cu and solder-paste/Cu interfaces of the joints is mainly controlled by bulk diffusion.
{"title":"Interfacial reactions and microstructural evolution of BGA structure Cu/Sn3.0Ag0.5Cu/Sn58Bi/Cu mixed assembly joints during isothermal aging","authors":"Jia-Qiang Huang, Min-bo Zhou, Xin-Ping Zhang","doi":"10.1109/ICEPT.2016.7583289","DOIUrl":"https://doi.org/10.1109/ICEPT.2016.7583289","url":null,"abstract":"In order to reduce the cost of solder materials and retard the thermal shock of temperature-sensitive electronic components during packaging process, SnBi solder paste was explored to replace SnAgCu solder paste due to the low melting temperature. In this study, BGA structure Cu/solder-ball/solder-paste/Cu joints were designed and prepared to study the interfacial reactions and microstructural evolution of the mixed assembly joints, by using homogenous Sn3.0Ag0.5Cu (SAC305) and Sn-58Bi (SnBi) solders in the forms of both ball and paste, during isothermal aging. Results show that microstructural coarsening occurs in Cu/SAC305-ball/SnBi-paste/Cu, Cu/SAC305-ball/SAC305-paste/Cu and Cu/SnBi-ball/SnBi-paste/Cu joints and the thicknesses of interfacial IMCs increase with prolonging the isothermal aging time. Crack may form in the fusion region between the SnAgCu and SnBi-SnAgCu mixed solders in Cu/SAC305/SnBi/Cu joints after aging at 125 °C for 150 h due to the difference in coefficient of thermal expansion (CTE) between the SAC305 and SnBi solders, which may significantly weaken the reliability of mixed assembly joints. Moreover, in the solder matrix of Cu/SAC305/SnBi/Cu joints, a large amount of bulk Cu6Sn5 phase exists due to the limited solubility of Cu in the SnBi matrix. In addition, the growth of interfacial IMC layer at both solder-ball/Cu and solder-paste/Cu interfaces of the joints is mainly controlled by bulk diffusion.","PeriodicalId":6881,"journal":{"name":"2016 17th International Conference on Electronic Packaging Technology (ICEPT)","volume":"1 1","pages":"968-973"},"PeriodicalIF":0.0,"publicationDate":"2016-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"75340551","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-08-01DOI: 10.1109/ICEPT.2016.7583355
Zhe Sun, Xuanlong Chen, Daotan Lin
With the widespread use of the flip-chip devices in production, failure analysis of flip-chip is becoming more and more important. As the core of failure analysis, failure localization has encountered many difficulties because of the special construction and increasing complexity of flip-chip. Photon emission microscopy (PEM) and optical beam induced current change (OBIRCH) are widely used methods in failure localization of the integrated circuit, by combining PEM and OBIRCH complementarily, quick, effective and accurate localization can be obtained. In this paper, the basic construction of flip-chip and the principle of PEM and OBIRCH was introduced, application of PEM and OBIRCH in failure localization of flip-chip was also presented, thus provide an effective failure localization technique for failure analysis of flip-chip.
{"title":"PEM/OBIRCH in failure localization of flip-chip","authors":"Zhe Sun, Xuanlong Chen, Daotan Lin","doi":"10.1109/ICEPT.2016.7583355","DOIUrl":"https://doi.org/10.1109/ICEPT.2016.7583355","url":null,"abstract":"With the widespread use of the flip-chip devices in production, failure analysis of flip-chip is becoming more and more important. As the core of failure analysis, failure localization has encountered many difficulties because of the special construction and increasing complexity of flip-chip. Photon emission microscopy (PEM) and optical beam induced current change (OBIRCH) are widely used methods in failure localization of the integrated circuit, by combining PEM and OBIRCH complementarily, quick, effective and accurate localization can be obtained. In this paper, the basic construction of flip-chip and the principle of PEM and OBIRCH was introduced, application of PEM and OBIRCH in failure localization of flip-chip was also presented, thus provide an effective failure localization technique for failure analysis of flip-chip.","PeriodicalId":6881,"journal":{"name":"2016 17th International Conference on Electronic Packaging Technology (ICEPT)","volume":"6 1","pages":"1272-1274"},"PeriodicalIF":0.0,"publicationDate":"2016-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74401157","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-08-01DOI: 10.1109/ICEPT.2016.7583133
N. Zhao, Y. Zhong, Mingliang L. Huang, Haitao Ma, W. Dong
Synchrotron radiation real-time imaging technology was conducted to in situ investigate the thermomigration and solidification behavior of Cu/Sn-58Bi/Cu solder joint during reflow under temperature gradient. The high concentration of Bi in solder retarded the thermomigration of Cu atoms and the interfacial reaction of the solder joint. Both the growth of the interfacial intermetallic compounds (IMCs) and the dissolution of the Cu substrates in the solder joints were inconspicuous. During the solidification, Bi-rich phase nucleated in the bulk solder and grew fast in the shape of triangular or quadrangular prism. Subsequently, the Sn-rich phase nucleated and dendritically grew in a high speed. Finally, the biphase separation in the bulk solder was clearly observed. The growth mechanism of both Bi-rich and Sn-rich grain under temperature gradient was discussed.
{"title":"Synchrotron radiation in situ study on the solidification of Cu/Sn-58Bi/Cu solder joint under temperature gradient","authors":"N. Zhao, Y. Zhong, Mingliang L. Huang, Haitao Ma, W. Dong","doi":"10.1109/ICEPT.2016.7583133","DOIUrl":"https://doi.org/10.1109/ICEPT.2016.7583133","url":null,"abstract":"Synchrotron radiation real-time imaging technology was conducted to in situ investigate the thermomigration and solidification behavior of Cu/Sn-58Bi/Cu solder joint during reflow under temperature gradient. The high concentration of Bi in solder retarded the thermomigration of Cu atoms and the interfacial reaction of the solder joint. Both the growth of the interfacial intermetallic compounds (IMCs) and the dissolution of the Cu substrates in the solder joints were inconspicuous. During the solidification, Bi-rich phase nucleated in the bulk solder and grew fast in the shape of triangular or quadrangular prism. Subsequently, the Sn-rich phase nucleated and dendritically grew in a high speed. Finally, the biphase separation in the bulk solder was clearly observed. The growth mechanism of both Bi-rich and Sn-rich grain under temperature gradient was discussed.","PeriodicalId":6881,"journal":{"name":"2016 17th International Conference on Electronic Packaging Technology (ICEPT)","volume":"104 1","pages":"264-267"},"PeriodicalIF":0.0,"publicationDate":"2016-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78751063","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-08-01DOI: 10.1109/ICEPT.2016.7583344
Zhuo Chen, Xianhe Zhang, Xianfei Fang, Hu He, Wenhui Zhu
For the purpose of process R&D on inter-die vertical connection for 3D integration, the role of ultrasonic vibration in forming a low-temperature bonding joint needs to be studied in-depth. Rather than focusing on the ultrasonic-induced interfacial reactions by molten solder, this study used low power ultrasonics to bond solder with flat Ni and microcone-structured Ni substrates respectively under solid state temperature, and interpreted the mechanisms of ultrasonics functioning on the formation of interfacial adhesion. Results of joint shear tests and interfacial observations showed that ultrasonics worked in totally different ways on two types of Ni surfaces, the transverse vibration could either promote microscopic contact between two sides, or deteriorate the joint strength if lasted too long, depending on the type of Ni used. The effect of frictional heating brought by ultrasonics on bonding formation was less prominent.
{"title":"The role of ultrasonics in formation of bonding for solid state solder interconnections","authors":"Zhuo Chen, Xianhe Zhang, Xianfei Fang, Hu He, Wenhui Zhu","doi":"10.1109/ICEPT.2016.7583344","DOIUrl":"https://doi.org/10.1109/ICEPT.2016.7583344","url":null,"abstract":"For the purpose of process R&D on inter-die vertical connection for 3D integration, the role of ultrasonic vibration in forming a low-temperature bonding joint needs to be studied in-depth. Rather than focusing on the ultrasonic-induced interfacial reactions by molten solder, this study used low power ultrasonics to bond solder with flat Ni and microcone-structured Ni substrates respectively under solid state temperature, and interpreted the mechanisms of ultrasonics functioning on the formation of interfacial adhesion. Results of joint shear tests and interfacial observations showed that ultrasonics worked in totally different ways on two types of Ni surfaces, the transverse vibration could either promote microscopic contact between two sides, or deteriorate the joint strength if lasted too long, depending on the type of Ni used. The effect of frictional heating brought by ultrasonics on bonding formation was less prominent.","PeriodicalId":6881,"journal":{"name":"2016 17th International Conference on Electronic Packaging Technology (ICEPT)","volume":"97 1","pages":"1222-1225"},"PeriodicalIF":0.0,"publicationDate":"2016-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74981968","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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