{"title":"A 28-GHz inverse class-F power amplifier with coupled-inductor based harmonic impedance modulator","authors":"S. Y. Mortazavi, Kwang-Jin Koh","doi":"10.1109/CICC.2015.7338364","DOIUrl":null,"url":null,"abstract":"This paper presents a 28 GHz class-F<sup>1</sup> power amplifier in 0.13-μm SiGe BiCMOS technology. The PA adopts a coupled-inductor based harmonic impedance modulator in order to terminate 2<sup>nd</sup> and 3<sup>rd</sup> harmonic load impedances appropriately for class-F<sup>1</sup> operation. The coupled coils essentially provide frequency-dependent inductance that is optimal to resonate out 2<sup>nd</sup> and 3<sup>rd</sup> harmonic reactive impedance. The PA achieve 40-42% PAE over 27.5 GHz to 29 GHz, peak 42% PAE at 28 GHz with 50 mW OP-1db power, one of the highest PAEs ever reported in silicon-based PAs. At 6-dB backoff output power, the PAE is as high as 20% Psat is 16.6 dBm. The PA occupies 0.55×0.96 mm<sup>2</sup>.","PeriodicalId":6665,"journal":{"name":"2015 IEEE Custom Integrated Circuits Conference (CICC)","volume":"75 1","pages":"1-4"},"PeriodicalIF":0.0000,"publicationDate":"2015-11-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"21","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2015 IEEE Custom Integrated Circuits Conference (CICC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CICC.2015.7338364","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 21
Abstract
This paper presents a 28 GHz class-F1 power amplifier in 0.13-μm SiGe BiCMOS technology. The PA adopts a coupled-inductor based harmonic impedance modulator in order to terminate 2nd and 3rd harmonic load impedances appropriately for class-F1 operation. The coupled coils essentially provide frequency-dependent inductance that is optimal to resonate out 2nd and 3rd harmonic reactive impedance. The PA achieve 40-42% PAE over 27.5 GHz to 29 GHz, peak 42% PAE at 28 GHz with 50 mW OP-1db power, one of the highest PAEs ever reported in silicon-based PAs. At 6-dB backoff output power, the PAE is as high as 20% Psat is 16.6 dBm. The PA occupies 0.55×0.96 mm2.
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