Simulation and Research of Piezoelectric Film Bulk Acoustic Resonator Based on Mason Model

Abstract

With the rapid development of micromechanical technology and the maturity of integrated circuit technology, which have made it possible to make miniaturization of high-performance frequency control devices. The piezoelectric film bulk acoustic resonator (FBAR) has gradually become one of the research hotspots of RF filters. This paper mainly derives the electrical impedance model of FBAR based on the sound wave transmission characteristics of thin-film materials, a one-dimensional Mason model is established for the later RF filter design, and the influence of the thickness and resonant area of each film on the resonant frequency of the device is studied. And detailed simulation of the physical parameters of the model. The simulation results show that as the thickness of each layer increases, the acoustic wave transmission path increases, and the loss increases, which causes the resonant frequency decrease gradually; as the resonant area increases, the resonant frequency is not affected, but the impedance value of the device decreases gradually.