Effect of Gamma Rays on The Bulk Etching Rate of LR-115 Detector

H. Yousef
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Abstract

It is important to measure the bulk-etching rate for any solid state nuclear track detectors, because they have an application in different fields of sciences. The effect of gamma rays emitted from 60 Co source with different doses on LR-115 detector was studied. The bulk etching rate of the detectors was measured before and after irradiation using gamma source. From the results the values of the bulk etching rate of LR-115 without gamma rays have been 3.10 μmh −1 and that under gamma irradiation with different doses were ranged from 4.60 to 8.77 μmh −1 . This means that the values of the bulk etch rate increase with increasing gamma doses.
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伽马射线对LR-115探测器体腐蚀速率的影响
对于任何固体核径迹探测器来说,测量体积腐蚀速率都是非常重要的,因为它们在不同的科学领域都有应用。研究了不同剂量60钴源发射的伽马射线对LR-115探测器的影响。测量了辐照前后探测器的体腐蚀速率。结果表明,在没有γ射线照射时,LR-115的体刻蚀速率为3.10 μmh−1,在不同剂量的γ射线照射下,LR-115的体刻蚀速率为4.60 ~ 8.77 μmh−1。这意味着随着伽马剂量的增加,体腐蚀速率的值增加。
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