Crystal field splitting of highly excited electronic states of the 4fn–1 5d electronic configuration of trivalent rare earth ions in wide band gap crystals

A.C. Cefalas , S. Kobe , Z. Kollia , E. Sarantopoulou
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引用次数: 3

Abstract

The energy position and the spacing of the levels of the 4fn–15d electronic configuration of the trivalent rare earth ion dopands in wide band gap fluoride crystal, depend on the symmetry and the type of the host matrix. Crystal field splitting of the 4f25d electronic configuration of the Nd3+ ions in SrF2 crystals have been observed in the VUV region of the spectrum. The absorption bands were due to the interconfigurational 4f3→4f25d dipole allowed transitions between the ground state with 4f3 electronic configuration of the Nd3+ ions and the Stark components of the 4f25d electronic configuration. The VUV spectra can be interpreted by applying the crystal field model, and taking into consideration both that lanthanide contraction of the 4fn–15d electronic configuration of the rare earth ions is taking place, and that the contribution of the positively charged ions in the total electric field, is effectively decreased with increasing numbers of the electrons in the 4fn electronic configuration due to effective charge shielding.

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宽禁带晶体中三价稀土离子4fn - 15d电子构型高激发态的晶体场分裂
宽禁带氟化物晶体中三价稀土离子掺杂的4fn-15d电子构型的能级位置和能级间距与基体的对称性和类型有关。在光谱的VUV区观察到SrF2晶体中Nd3+离子的4f25d电子构型的晶体场分裂。吸收带是由于Nd3+离子的4f3电子构型基态和4f25d电子构型之间的4f3→4f25d偶极子允许跃迁。VUV光谱可以应用晶体场模型进行解释,同时考虑到稀土离子的4fn - 15d电子组态发生镧系收缩,以及由于有效的电荷屏蔽,正电荷离子对总电场的贡献随着4fn电子组态中电子数量的增加而有效降低。
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