Single electron-hole pair generation using dark-bright solitons conversion control

Abstract

Recently, the electron-hole pair generated in 1.06-µm separate-absorber-avalanche (multiplier) InP-based devices [1], SiGe/Si planar waveguides [2] fabricated with a Ge concentration ranging from 2% to 6% and different thicknesses ranging from 200 nm to 2 µm, generating electron-hole pairs with a 100 fs laser pulse emitted at 810 nm, and monitoring the free-carrier absorption transient with a c.w. probe beam at 1.55 µm, bipolar transistors [3], CMOS process [4], InAs-GaSb superlattice (SL) photodiodes [5], resonant microcavity [6], A cavity-QED using a single InAs quantum dot and a high-Q whispering gallery mode [7].