Phase composition of Cu2SnS3 thin films prepared by Ultrasonic Spray Pyrolysis as potential photovoltaic material

Ignacio Estevez Espinoza, Y. Matsumoto, M. Ortega-López, J. Espinoza
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引用次数: 2

Abstract

Quaternary and ternary semiconductors derived from the Cu-Zn-Sn-S system, holds promise as absorber materials for thin film solar cells. This paper presents a study on the phase composition of Cu2SnS3 (CTS) thin films prepared by ultrasonic spray pyrolysis of CuCl2-2H2O, SnCl2 and thiourea (NH2)2CS water-ethanol mixtures. After being deposited on glass-slide substrates, the films were thermally treated at 380 °C for 50 minutes in vacuum. The as-deposited and annealed films consisted of a mixture of monoclinic and tetragonal CTS as determined by Raman spectroscopy. The prepared CTS films have p-type conductivity as verified by the hot-probe method, and energy gaps of 0.87 and 1.15 eV associated to monoclinic and tetragonal phases of CTS.
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超声喷雾热解法制备Cu2SnS3薄膜的物相组成
来源于Cu-Zn-Sn-S体系的四元和三元半导体有望成为薄膜太阳能电池的吸收材料。本文研究了超声波喷雾热解CuCl2-2H2O、SnCl2和硫脲(NH2)2CS水-乙醇混合物制备Cu2SnS3 (CTS)薄膜的相组成。在玻璃载玻片基底上沉积后,在380°C真空中热处理50分钟。通过拉曼光谱测定,沉积和退火后的薄膜由单斜和四方CTS混合组成。热探针法验证了制备的CTS薄膜具有p型电导率,CTS单斜相和四方相的能隙分别为0.87和1.15 eV。
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