Carbon nanotubes TSV grown on an electrically conductive ZrN support layer

Abstract

Carbon nanotubes (CNT) are an attractive alternative filler material for through silicon vias (TSV) due to their high aspect ratio, attractive mechanical and thermal properties and high current carrying capability. Theoretically they can outperform Cu in terms of via resistance. Until now all CNT TSV reported in the literature were fabricated using electrically isolating catalyst support layers. In this work we demonstrate the growth of CNT with aspect ratios up to 35 on electrically conductive ZrN layers. This was used to fabricate the first CNT TSV which are directly contacted by metal thin-films on both sides of the CNT bundle, instead of resorting to the use of probe needles.