{"title":"InN: The low bandgap III-nitride semiconductor","authors":"A. Georgakilas","doi":"10.1109/SMICND.2008.4703325","DOIUrl":null,"url":null,"abstract":"An overview of our understanding of InN (0001) epitaxial growth and material properties is presented. Thermodynamic and kinetic aspects of the epitaxial growth of InN by nitrogen rf plasma source molecular beam epitaxy were analysed and the self-regulated growth mechanism of InN was determined. Optimized InN films were grown with thicknesses up to 10 mum. Fundamental material properties, such as lattice parameters and bandgap energy were determined. The acceptor-like electrical activity of threading dislocations was evaluated. GaN barrier-enhanced Schottky diodes were fabricated on a thin InN channel and could modulate its carrier concentration.","PeriodicalId":6406,"journal":{"name":"2008 IEEE International Conference on Semiconductor Electronics","volume":"22 1","pages":"43-52"},"PeriodicalIF":0.0000,"publicationDate":"2008-12-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2008 IEEE International Conference on Semiconductor Electronics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SMICND.2008.4703325","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2
Abstract
An overview of our understanding of InN (0001) epitaxial growth and material properties is presented. Thermodynamic and kinetic aspects of the epitaxial growth of InN by nitrogen rf plasma source molecular beam epitaxy were analysed and the self-regulated growth mechanism of InN was determined. Optimized InN films were grown with thicknesses up to 10 mum. Fundamental material properties, such as lattice parameters and bandgap energy were determined. The acceptor-like electrical activity of threading dislocations was evaluated. GaN barrier-enhanced Schottky diodes were fabricated on a thin InN channel and could modulate its carrier concentration.
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