Vishwas Acharya, A. Sharma, S. Jangu, Prakash Singh
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引用次数: 0
Abstract
We describe the fabrication and device characterization of PBZ/IZO/PBS heterojunction photo transistor by using dielectric properties of lead barium zirconate (PBZ) thin film through solution processed. PBZ thin film is fabricated by low cost sol-gel process on heavily doped Si-substrate (p++-Si). Solution processed IZO used as a channel semiconductor for bottom gate top contact geometry of TFT. The fabricated device require <5V operating voltage to saturate with high drain current which is very beneficial for low-power electronics. Metal oxide/quantum dot heterojunction phototransistor was fabricated by coating IZO TFT with colloidal lead sulphide (PbS) quantum dot that shows the responsivity and the response time of 3 × 10−4 A/W and 2 sec respectively.
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