{"title":"Investigation of trap profile in nitride charge trap layer in 3-D NAND flash memory cells","authors":"Jong-Ho Lee, Ho-Jung Kang","doi":"10.1109/CSTIC.2017.7919730","DOIUrl":null,"url":null,"abstract":"We extract the trap density (N<inf>t</inf>) profile of the nitride storage layer in 3-D NAND flash memory cells. The adjacent cells which are programmed suppress significantly the lateral diffusion during retention measurement so that we can extract accurate N<inf>t</inf> profile. The AC-g<inf>m</inf> method makes the N<inf>t</inf> profiling in an E<inf>C</inf>-E<inf>T</inf> range of 1∼1.2 eV possible, and provides a Gaussian N<inf>t</inf> profile together with the retention model. The threshold voltage shift with trapped electron profiles is firstly modeled as a parameter of channel radius and its model is verified.","PeriodicalId":6846,"journal":{"name":"2017 China Semiconductor Technology International Conference (CSTIC)","volume":"34 1","pages":"1-2"},"PeriodicalIF":0.0000,"publicationDate":"2017-03-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 China Semiconductor Technology International Conference (CSTIC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CSTIC.2017.7919730","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
We extract the trap density (Nt) profile of the nitride storage layer in 3-D NAND flash memory cells. The adjacent cells which are programmed suppress significantly the lateral diffusion during retention measurement so that we can extract accurate Nt profile. The AC-gm method makes the Nt profiling in an EC-ET range of 1∼1.2 eV possible, and provides a Gaussian Nt profile together with the retention model. The threshold voltage shift with trapped electron profiles is firstly modeled as a parameter of channel radius and its model is verified.
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