J. DeBrosse, T. Maffitt, Yutaka Nakamura, G. Jan, P. Wang
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引用次数: 4
Abstract
Spin Transfer Torque Magnetoresistive RAM (STT MRAM) has uniquely attractive write performance and endurance characteristics. Nonetheless, little STT MRAM circuit hardware data has been published [1-4]. This paper describes a fully-functional 90nm 8Mb STT MRAM, identifies and describes solutions to the primary circuit challenges, and includes considerable circuit hardware data.
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