Complete analytical submicron MOS transistor model for analogue applications

Abstract

A compact analytical model of nanoscale MOS transistors which takes into account the effects of velocity saturation and channel length modulation is proven. Equations for the transfer and output characteristics and for the dynamic analogue parameters (transconductance and output resistance) are obtained, in the case of pMOS, as well as nMOS transistors. Experimental transfer and output characteristics of short channel devices match well with calculated curves based on the model, for different transistor geometries. A very good agreement of the new model with the experimental data for transconductance and output resistance is also obtained.