Byoung-Chul Park, S. Lee, D. Chang, K. Bang, Sung-Jun Kim, Sang-bae Yi, E. Jung
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引用次数: 2
Abstract
In high voltage transistor (HVT), device characteristics could be affected by little changes of doping concentration or parasitic charges due to low substrate doping concentrations. Humps caused by boron segregation in sub-threshold region of HVT make bad effects on device characteristics. In this paper, we have presented the novel Fermi leve controlled HVT (FCHVT) to simply eliminate hump effects.
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