Effects of various metal contacts on contact resistance and barrier height of metal/graphene interface

Abstract

Graphene has attracted enormous attention as a possible candidate to replace Silicon in CMOS technology owing to its unique and superior carrier mobility. It was found that graphene is a zero bandgap semiconductor and its carrier behaves as a massless Dirac fermion with mobility as high as 200,000 cm2/Vs, which is more than 100 times higher than that of Silicon [1]. This makes graphene as a suitable material for the realization of ultra-high speed electronic device with low power consumption. In order to fully utilize the potential of graphene, issues such as synthesis method of graphene, ohmic and schottky contact formation and bandgap modulation method have been extensively studied.