A. Mosleh, S. Ghetmiri, B. Conley, H. Abu-Safe, Z. Waqar, M. Benamara, Shui-Qing Yu, H. Naseem
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引用次数: 2
Abstract
Smooth nucleation of silicon has been achieved as a critical step in epitaxial growth process using ultra high vacuum chemical vapor deposition system at 250°C. Proper conditions were achieved by studying the effect of key nucleation parameters such as plasma power, hydrogen dilution and deposition temperature. High-resolution transmission electron microscopy has been employed to study rough nucleation condition in order to achieve perfect nucleation step, which resulted in high quality epilayers.
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