{"title":"Dark current analysis of P-type and N-type pixels under total ionizing dose radiation effects","authors":"R. Zheng, Jia Wang","doi":"10.1109/APCCAS.2016.7804013","DOIUrl":null,"url":null,"abstract":"In this paper, a custom-designed CMOS image sensor (CIS) is proposed with N-type and P-type pixels fabricated on one chip. A Co radiation experiment is implemented on the proposed CIS chip. Measurement results shows that the P-type pixels have good total ionizing dose (TID) radiation tolerance with less radiation induced dark current compared with N-type pixels. But the dark current nonuniformity of P-type pixels is observed to be enhanced more than N-type ones by TID radiation effect.","PeriodicalId":6495,"journal":{"name":"2016 IEEE Asia Pacific Conference on Circuits and Systems (APCCAS)","volume":"33 1","pages":"499-501"},"PeriodicalIF":0.0000,"publicationDate":"2016-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 IEEE Asia Pacific Conference on Circuits and Systems (APCCAS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/APCCAS.2016.7804013","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
In this paper, a custom-designed CMOS image sensor (CIS) is proposed with N-type and P-type pixels fabricated on one chip. A Co radiation experiment is implemented on the proposed CIS chip. Measurement results shows that the P-type pixels have good total ionizing dose (TID) radiation tolerance with less radiation induced dark current compared with N-type pixels. But the dark current nonuniformity of P-type pixels is observed to be enhanced more than N-type ones by TID radiation effect.
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