{"title":"Discrete B-spline wavelet method for semiconductor device simulation","authors":"F. Chang, K. Pun","doi":"10.1109/ISCAS.1997.608664","DOIUrl":null,"url":null,"abstract":"Wavelet Method has been found to be very effective in treating singularities due to its properties of localization both in time/spatial and frequency domains. Singularities exist in the simulation of semiconductor devices. We now introduce the Discrete B-spline wavelet method for semiconductor devices simulation. Starting from the governing equations of semiconductor devices, the wavelet basis is used to solve these nonlinear ordinary differential equations. We find it much better than conventional finite difference methods in both computational time and accuracy. As an example, the steady state response of an abrupt P-N junction diode demonstrates this effectiveness.","PeriodicalId":68559,"journal":{"name":"电路与系统学报","volume":"8 1","pages":"193-196 vol.1"},"PeriodicalIF":0.0000,"publicationDate":"1997-06-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"电路与系统学报","FirstCategoryId":"1093","ListUrlMain":"https://doi.org/10.1109/ISCAS.1997.608664","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2
Abstract
Wavelet Method has been found to be very effective in treating singularities due to its properties of localization both in time/spatial and frequency domains. Singularities exist in the simulation of semiconductor devices. We now introduce the Discrete B-spline wavelet method for semiconductor devices simulation. Starting from the governing equations of semiconductor devices, the wavelet basis is used to solve these nonlinear ordinary differential equations. We find it much better than conventional finite difference methods in both computational time and accuracy. As an example, the steady state response of an abrupt P-N junction diode demonstrates this effectiveness.
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