Discrete B-spline wavelet method for semiconductor device simulation

F. Chang, K. Pun
{"title":"Discrete B-spline wavelet method for semiconductor device simulation","authors":"F. Chang, K. Pun","doi":"10.1109/ISCAS.1997.608664","DOIUrl":null,"url":null,"abstract":"Wavelet Method has been found to be very effective in treating singularities due to its properties of localization both in time/spatial and frequency domains. Singularities exist in the simulation of semiconductor devices. We now introduce the Discrete B-spline wavelet method for semiconductor devices simulation. Starting from the governing equations of semiconductor devices, the wavelet basis is used to solve these nonlinear ordinary differential equations. We find it much better than conventional finite difference methods in both computational time and accuracy. As an example, the steady state response of an abrupt P-N junction diode demonstrates this effectiveness.","PeriodicalId":68559,"journal":{"name":"电路与系统学报","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"1997-06-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"电路与系统学报","FirstCategoryId":"1093","ListUrlMain":"https://doi.org/10.1109/ISCAS.1997.608664","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2

Abstract

Wavelet Method has been found to be very effective in treating singularities due to its properties of localization both in time/spatial and frequency domains. Singularities exist in the simulation of semiconductor devices. We now introduce the Discrete B-spline wavelet method for semiconductor devices simulation. Starting from the governing equations of semiconductor devices, the wavelet basis is used to solve these nonlinear ordinary differential equations. We find it much better than conventional finite difference methods in both computational time and accuracy. As an example, the steady state response of an abrupt P-N junction diode demonstrates this effectiveness.
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
半导体器件仿真的离散b样条小波方法
由于小波方法在时间/空间和频率域的局域性,它是一种非常有效的处理奇异点的方法。奇点存在于半导体器件的仿真中。现在我们介绍离散b样条小波方法用于半导体器件的仿真。从半导体器件的控制方程出发,利用小波基求解这些非线性常微分方程。结果表明,该方法在计算时间和精度上都优于传统的有限差分方法。作为一个例子,一个突变pn结二极管的稳态响应证明了这种有效性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 去求助
来源期刊
自引率
0.00%
发文量
2463
期刊最新文献
Hysteresis quantizer Design of wide-tunable translinear second-order oscillators Design of a direct digital synthesizer with an on-chip D/A-converter Steady state analysis of SMPS Low power wireless communication and signal processing circuits for distributed microsensors
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1