{"title":"Reliability investigations on the programming currents of 28nm metal e-Fuse","authors":"Guangyan Zhao, Y. Zhao, W. Chien","doi":"10.1109/CSTIC.2017.7919737","DOIUrl":null,"url":null,"abstract":"The reliability performance of 28nm metal e-Fuse programmed with different current is investigated. High temperature stress (HTS) or temperature cycling (TC) may cause the shift of metal-e-fuse element resistance and shape. In this paper, we find that 28nm metal e-Fuse programming with low current reliability performance is more stable than metal e-Fuse programming with high current; Resistance shift was only observed on fuses programmed in the over-programmed mode. In addition, the SEM profile of metal e-Fuse programming with low current is obviously better than high current SEM profile.","PeriodicalId":6846,"journal":{"name":"2017 China Semiconductor Technology International Conference (CSTIC)","volume":"36 1","pages":"1-3"},"PeriodicalIF":0.0000,"publicationDate":"2017-03-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 China Semiconductor Technology International Conference (CSTIC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CSTIC.2017.7919737","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
The reliability performance of 28nm metal e-Fuse programmed with different current is investigated. High temperature stress (HTS) or temperature cycling (TC) may cause the shift of metal-e-fuse element resistance and shape. In this paper, we find that 28nm metal e-Fuse programming with low current reliability performance is more stable than metal e-Fuse programming with high current; Resistance shift was only observed on fuses programmed in the over-programmed mode. In addition, the SEM profile of metal e-Fuse programming with low current is obviously better than high current SEM profile.
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