A Novel 32-Gb/s 5.6-Vpp Digital-to-Analog Converter in 100 nm GaN Technology for 5G Signal Generation

M. Weiß, C. Friesicke, R. Quay, O. Ambacher
{"title":"A Novel 32-Gb/s 5.6-Vpp Digital-to-Analog Converter in 100 nm GaN Technology for 5G Signal Generation","authors":"M. Weiß, C. Friesicke, R. Quay, O. Ambacher","doi":"10.1109/IMS30576.2020.9224080","DOIUrl":null,"url":null,"abstract":"The RF-power digital-to-analog converter (DAC) presented here provides RF-signals in the gigabit regime with voltage swings up to 8.32 V, suitable to drive subsequent single-stage microwave gallium nitride (GaN) power amplifer for sub-six frequencies. A current-steering architecture is driven by a custom algorithm to provide a programmable high output current, up to 250 mA, to a capacitive load such as the capacitive input impedance of an single-stage GaN power amplifier. This architecture provides data rates up to 32 Gb/s with an custom encoding, while the output voltage swing at the load capacitance is higher than 5 Vpp. Therefore, slew rates of up to 76 V/ns can be established.","PeriodicalId":6784,"journal":{"name":"2020 IEEE/MTT-S International Microwave Symposium (IMS)","volume":"37 1","pages":"952-955"},"PeriodicalIF":0.0000,"publicationDate":"2020-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2020 IEEE/MTT-S International Microwave Symposium (IMS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IMS30576.2020.9224080","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1

Abstract

The RF-power digital-to-analog converter (DAC) presented here provides RF-signals in the gigabit regime with voltage swings up to 8.32 V, suitable to drive subsequent single-stage microwave gallium nitride (GaN) power amplifer for sub-six frequencies. A current-steering architecture is driven by a custom algorithm to provide a programmable high output current, up to 250 mA, to a capacitive load such as the capacitive input impedance of an single-stage GaN power amplifier. This architecture provides data rates up to 32 Gb/s with an custom encoding, while the output voltage swing at the load capacitance is higher than 5 Vpp. Therefore, slew rates of up to 76 V/ns can be established.
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基于100nm GaN技术的新型32gb /s 5.6 vpp数模转换器,用于5G信号生成
本文提出的射频功率数模转换器(DAC)提供千兆频段的射频信号,电压波动高达8.32 V,适用于驱动后续的六次频率单级微波氮化镓(GaN)功率放大器。电流转向架构由定制算法驱动,为容性负载(如单级GaN功率放大器的容性输入阻抗)提供高达250 mA的可编程高输出电流。该架构通过自定义编码提供高达32 Gb/s的数据速率,而负载电容下的输出电压摆幅高于5 Vpp。因此,可以建立高达76 V/ns的转换速率。
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