The decrease in the hall angle and the sensitivity of silicon magnetic sensors at high electric fields

Abstract

A theory of the decrease in the sensitivity and the Hall angle in silicon magnetic sensors is pre- sented. The mean collision-free time decreases in the presence of a strong electric field, which results in a smaller Hall angle. The total deflection of the charge carriers in a vertical dual-collector bipolar magnetotransistor is the sum of the contributions of the deflection in the collector-base depletion layer and the deflection in the ohmic collector region. The sensitivity of a magnetotransistor de- creases due to the decrease in the Hall angle in the depletion layer and the increased power dissipa- tion and temperature of the device. The sensitivity decreases by 25% when the collector-base voltage is increased by 10 V.