Growth of highly crystalline WO3 nanorod using a facile hydrothermal synthesis

A. Mandal, K. Das Gupta, S. Chakrabarti
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Abstract

Tungsten oxide (WO3), which is also known as tungsten trioxide and wide band gap semiconductor material has drawn enormous attention among researchers due to its fascinating properties. Using facile one step hydrothermal method, the synthesis and characterizations of highly crystalline 1D nanorod of WO3 are presented in this paper with large scale production of the material. Several characterization techniques, such as transmission electron microscopy (TEM), field emission gun-scanning electron microscopy (FEG-SEM), X-ray diffraction (XRD), UV-vis spectroscopy have been employed to check the crystallinity, surface morphology, shape, and band gap of the nanomaterial. The XRD data confirms about the highly crystalline hexagonal phase of WO3, which agrees well with the JCPDS card no – 01-085- 2459. Nanorod like morphology can be seen in the low-resolution TEM image. In the HRTEM image, the highly crystalline nature of the material is clearly visible and the obtained interplanar spacing is 0.38 nm which matches with the interplanar spacing of (002) plane. The FEG-SEM image shows the 1D nanorod morphology of the synthesized material. The diameters of the nanorods are in the range of 50-300 nm. The Fourier transform infrared spectroscopy (FTIR) revels the structural information about the synthesized material. The broad peak around 805 cm-1 is attributed to the W-O-W bond stretching vibration. Two other peaks appeared at 1405 and 1628 cm-1 are representing the vibration mode of W-OH bond. We have also studied the UV-vis absorption spectroscopy of the WO3 nanorod to investigate the light absorption property of the material. The band gap obtained from the Tauc plot is 3.16 eV, indicates the wide and direct band gap formation of WO3 nanorod. The synthesized material is suitable for various applications, such as gas sensing, UV photodetector, supercapacitor, and photocatalyst.
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水热法生长高结晶WO3纳米棒
氧化钨(WO3),又称三氧化钨,是一种宽带隙半导体材料,因其独特的性能而备受关注。本文采用简便的一步水热法制备了高结晶度的一维WO3纳米棒,并对该材料进行了规模化生产。利用透射电子显微镜(TEM)、场发射枪扫描电子显微镜(fg - sem)、x射线衍射(XRD)、紫外可见光谱等表征技术对纳米材料的结晶度、表面形貌、形状和带隙进行了表征。XRD数据证实WO3为高结晶六方相,与JCPDS卡号- 01-085- 2459的结果吻合较好。在低分辨率的TEM图像中可以看到纳米棒状的形态。在HRTEM图像中,材料的高度结晶性清晰可见,得到的面间距为0.38 nm,与(002)面的面间距相匹配。FEG-SEM图像显示了合成材料的一维纳米棒形貌。纳米棒的直径在50-300纳米之间。傅里叶变换红外光谱(FTIR)揭示了合成材料的结构信息。805 cm-1附近的宽峰是由W-O-W键拉伸振动引起的。另外两个峰出现在1405和1628 cm-1处,代表了W-OH键的振动模式。我们还研究了WO3纳米棒的紫外-可见吸收光谱,以研究材料的光吸收性能。Tauc图得到的带隙为3.16 eV,表明WO3纳米棒形成了宽而直接的带隙。该合成材料适用于气敏、紫外光电探测器、超级电容器、光催化剂等多种应用。
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