S. Murai, Yuto Inoue, TienYang Lo, Katsuhisa Tanaka
We fabricated dielectric nanoantenna stickers comprising a periodic array of TiO2 nanoparticles embedded inside the polydimethylsiloxane (PDMS). For the fabrication, we first used a nanoimprint to make a square lattice of TiO2 nanoparticles on the SiO2 glass substrate, and then covered it with a PDMS film. Finally, the nanoantenna was transferred from the substrate to the PDMS by dissolving the sacrifice layer between the nanoantenna and the substrate. We found that poly(sodium-4-styrene sulfonate) was suitable as the water-soluble sacrifice layer for the transfer of TiO2 nanoantenna. As a demonstration, we placed the TiO2 nanoantenna sticker on top of the light-emitting layer. The emission from the emitter layer was enhanced directionally following the dispersion of lattice resonances excited in the sticker.
{"title":"Dielectric nanoantenna stickers for photoluminescence control","authors":"S. Murai, Yuto Inoue, TienYang Lo, Katsuhisa Tanaka","doi":"10.1117/12.2678250","DOIUrl":"https://doi.org/10.1117/12.2678250","url":null,"abstract":"We fabricated dielectric nanoantenna stickers comprising a periodic array of TiO2 nanoparticles embedded inside the polydimethylsiloxane (PDMS). For the fabrication, we first used a nanoimprint to make a square lattice of TiO2 nanoparticles on the SiO2 glass substrate, and then covered it with a PDMS film. Finally, the nanoantenna was transferred from the substrate to the PDMS by dissolving the sacrifice layer between the nanoantenna and the substrate. We found that poly(sodium-4-styrene sulfonate) was suitable as the water-soluble sacrifice layer for the transfer of TiO2 nanoantenna. As a demonstration, we placed the TiO2 nanoantenna sticker on top of the light-emitting layer. The emission from the emitter layer was enhanced directionally following the dispersion of lattice resonances excited in the sticker.","PeriodicalId":13820,"journal":{"name":"International Conference on Nanoscience, Engineering and Technology (ICONSET 2011)","volume":"59 1","pages":"126480J - 126480J-5"},"PeriodicalIF":0.0,"publicationDate":"2023-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"75290060","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Archishman Saha, M. Mishra, R. Saha, A. Dalal, Ankita Sengupta, A. Mondal, S. Chattopadhyay, S. Chakrabarti
The formation of reproducible p-type conductivity in ZnO thin films is highly challenging now a days for the fabrication of several homo/heterojunction based fully transparent opto-electronic devices. In this study, p-type P: ZnO thin films are deposited by cost-effective SOD process and then intrinsically n-type Ga2O3 films are deposited on it to validate the p-type conductivity of ZnO by making vertical heterojunction with n-Ga2O3. The ZnO thin films are deposited by RF sputtering and subsequent P-doping is done by using the SOD technique on it. This involves proximity diffusing dopants into a spin-coated film by stacking the dopant source during thermal annealing at 800◦C for four hours in the furnace. Ga2O3 films are deposited on the P: ZnO films by using RF sputtering technique, for making the heterojunction. The electrical measurements are performed by using current-voltage (I-V) measurements under illuminated and dark conditions. The photo-switching and responsivity are also measured on the fabricated device. It is observed that the P: ZnO/Ga2O3 heterojunction exhibits the photoresponse in the dual wavelength region. The corresponding two peaks of responsivity are found around 200 nm and 390 nm with the values of 68.03 A/W and 7.93 A/W (at 5 V), respectively. Such two peaks originated due to the ultra-wide bandgaps of Ga2O3 (4.7eV) and P: ZnO (3.1 eV). Also, such heterojunction shows a rapid switching speed under white light at 5 V (rise time: 230 ms, fall time: 163 ms) and −5 V (rise time: 83 ms, Fall time: 169 ms), which is comparable with the other reported results. Therefore, the current study demonstrates the development of highly stable and reproducible p-type P: ZnO thin films by employing SOD technique and the validation of p-type formation by fabricating P: ZnO/Ga2O3 heterojunctions for dual-wavelength selector UV detector application and such detectors can be a potential candidate for various optoelectronic devices.
{"title":"Validation of stable p-type phosphorus (P) doped ZnO thin films formation by investigating the photoresponse properties of P:ZnO/Ga2O3 heterojunctions","authors":"Archishman Saha, M. Mishra, R. Saha, A. Dalal, Ankita Sengupta, A. Mondal, S. Chattopadhyay, S. Chakrabarti","doi":"10.1117/12.2677483","DOIUrl":"https://doi.org/10.1117/12.2677483","url":null,"abstract":"The formation of reproducible p-type conductivity in ZnO thin films is highly challenging now a days for the fabrication of several homo/heterojunction based fully transparent opto-electronic devices. In this study, p-type P: ZnO thin films are deposited by cost-effective SOD process and then intrinsically n-type Ga2O3 films are deposited on it to validate the p-type conductivity of ZnO by making vertical heterojunction with n-Ga2O3. The ZnO thin films are deposited by RF sputtering and subsequent P-doping is done by using the SOD technique on it. This involves proximity diffusing dopants into a spin-coated film by stacking the dopant source during thermal annealing at 800◦C for four hours in the furnace. Ga2O3 films are deposited on the P: ZnO films by using RF sputtering technique, for making the heterojunction. The electrical measurements are performed by using current-voltage (I-V) measurements under illuminated and dark conditions. The photo-switching and responsivity are also measured on the fabricated device. It is observed that the P: ZnO/Ga2O3 heterojunction exhibits the photoresponse in the dual wavelength region. The corresponding two peaks of responsivity are found around 200 nm and 390 nm with the values of 68.03 A/W and 7.93 A/W (at 5 V), respectively. Such two peaks originated due to the ultra-wide bandgaps of Ga2O3 (4.7eV) and P: ZnO (3.1 eV). Also, such heterojunction shows a rapid switching speed under white light at 5 V (rise time: 230 ms, fall time: 163 ms) and −5 V (rise time: 83 ms, Fall time: 169 ms), which is comparable with the other reported results. Therefore, the current study demonstrates the development of highly stable and reproducible p-type P: ZnO thin films by employing SOD technique and the validation of p-type formation by fabricating P: ZnO/Ga2O3 heterojunctions for dual-wavelength selector UV detector application and such detectors can be a potential candidate for various optoelectronic devices.","PeriodicalId":13820,"journal":{"name":"International Conference on Nanoscience, Engineering and Technology (ICONSET 2011)","volume":"47 1","pages":"1265109 - 1265109-8"},"PeriodicalIF":0.0,"publicationDate":"2023-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81607364","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
A. Mandal, S. K. Pandey, Kantimay Das Gupta, S. Chakrabarti
Vanadium disulfide (VS2), which belongs to transition metal dichalcogenides (TMDs) group, is a prominent material for energy storage application. On the other hand, graphene like carbon-based nanomaterials offer improved electrochemical performance due to high specific surface area, excellent conductivity, good chemical, and mechanical stability. Therefore, composite of graphene like material with TMD have shown better electrochemical performance till date. In this work, we have synthesized VS2/N-rGO composite material, which can be applicable for energy storage device. At first, we have synthesized graphene oxide (GO) using Tour method. Then we reduced GO along with nitrogen doping using hydrothermal route. After that, we have synthesized VS2/N-rGO by hydrothermal method. The X-ray diffraction (XRD) spectrum of GO shows a prominent peak at 10.2°, which implies the interlayer spacing in GO of 8.7 Å. After reduction and doping with nitrogen (N), two peaks are obtained at 24.7° (d = 3.6 Å), and 42.3° (d = 2.1 Å) in the XRD pattern which corresponds to N-rGO. RAMAN spectrum of composite shows the characteristics peaks of VS2 at 141.6, 194.5, 286.4, 404.1, 680.1 and 997.2 cm-1 along with D and G bands coming from the N-rGO. We have also performed the Fourier-transform infrared-spectroscopy (FTIR) and Field-emission gun-scanning electron-microscopy (FEG-SEM) characterizations to investigate the bonding vibration and surface morphology of the materials. The synthesized material is suitable for energy storage applications.
{"title":"Synthesis of VS2/N-rGO nanocomposite material for energy storage application","authors":"A. Mandal, S. K. Pandey, Kantimay Das Gupta, S. Chakrabarti","doi":"10.1117/12.2676828","DOIUrl":"https://doi.org/10.1117/12.2676828","url":null,"abstract":"Vanadium disulfide (VS2), which belongs to transition metal dichalcogenides (TMDs) group, is a prominent material for energy storage application. On the other hand, graphene like carbon-based nanomaterials offer improved electrochemical performance due to high specific surface area, excellent conductivity, good chemical, and mechanical stability. Therefore, composite of graphene like material with TMD have shown better electrochemical performance till date. In this work, we have synthesized VS2/N-rGO composite material, which can be applicable for energy storage device. At first, we have synthesized graphene oxide (GO) using Tour method. Then we reduced GO along with nitrogen doping using hydrothermal route. After that, we have synthesized VS2/N-rGO by hydrothermal method. The X-ray diffraction (XRD) spectrum of GO shows a prominent peak at 10.2°, which implies the interlayer spacing in GO of 8.7 Å. After reduction and doping with nitrogen (N), two peaks are obtained at 24.7° (d = 3.6 Å), and 42.3° (d = 2.1 Å) in the XRD pattern which corresponds to N-rGO. RAMAN spectrum of composite shows the characteristics peaks of VS2 at 141.6, 194.5, 286.4, 404.1, 680.1 and 997.2 cm-1 along with D and G bands coming from the N-rGO. We have also performed the Fourier-transform infrared-spectroscopy (FTIR) and Field-emission gun-scanning electron-microscopy (FEG-SEM) characterizations to investigate the bonding vibration and surface morphology of the materials. The synthesized material is suitable for energy storage applications.","PeriodicalId":13820,"journal":{"name":"International Conference on Nanoscience, Engineering and Technology (ICONSET 2011)","volume":"128 1","pages":"126510C - 126510C-8"},"PeriodicalIF":0.0,"publicationDate":"2023-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78645593","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The bound states in the continuum (BIC) were first discovered by von Neumann and Wigner in quantum mechanics. It was subsequently identified in photonics. BIC represents an embedded eigenmode that can perfectly confine light. The optical resonators that support this mode can have very large field enhancements and infinite Q factor in theory. Considering these advantages as well as the negligible heat generation, the dielectric metasurface using BIC mode is a more promising platform for sensor applications. Nevertheless, their performance is quite constrained by factors such as inevitable fabrication imperfections, the array size of chips, and up-down symmetry breaking. To mitigate these challenges, we construct merging BICs with the accessible electric field distribution in a Lieb lattice. Meanwhile, we integrated this system with a lateral photonic crystal mirror to enhance its performance in compact conditions. The design we propose remains robust, sustaining a very high Q factor (up to 105) even when the up-down symmetry is broken, which provides a potential platform for optical trapping and biomedical sensing applications.
{"title":"High-performance sensor based on bound states in the continuum","authors":"Guodong Zhu, Sen Yang, J. Ndukaife","doi":"10.1117/12.2680445","DOIUrl":"https://doi.org/10.1117/12.2680445","url":null,"abstract":"The bound states in the continuum (BIC) were first discovered by von Neumann and Wigner in quantum mechanics. It was subsequently identified in photonics. BIC represents an embedded eigenmode that can perfectly confine light. The optical resonators that support this mode can have very large field enhancements and infinite Q factor in theory. Considering these advantages as well as the negligible heat generation, the dielectric metasurface using BIC mode is a more promising platform for sensor applications. Nevertheless, their performance is quite constrained by factors such as inevitable fabrication imperfections, the array size of chips, and up-down symmetry breaking. To mitigate these challenges, we construct merging BICs with the accessible electric field distribution in a Lieb lattice. Meanwhile, we integrated this system with a lateral photonic crystal mirror to enhance its performance in compact conditions. The design we propose remains robust, sustaining a very high Q factor (up to 105) even when the up-down symmetry is broken, which provides a potential platform for optical trapping and biomedical sensing applications.","PeriodicalId":13820,"journal":{"name":"International Conference on Nanoscience, Engineering and Technology (ICONSET 2011)","volume":"29 1","pages":"126490P - 126490P-6"},"PeriodicalIF":0.0,"publicationDate":"2023-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90478717","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
This paper reports on the giant circular dichroic second-harmonic generation (CD-SHG) behavior of double SP resonant chiral Al nanorod (AlNR) dimer structures. The two AlNRs are aligned in a straight line. It becomes chiral, when one of the AlNRs is shifted laterally from it. We obtained CD-SHG signals up to 0.5 for the corresponding amount of the shift. Additionally, the sign of the CD-SHG was reversed, when the sign of the shift was reversed. The amount of the CD-SHG was flexibly tunable by changing the amount of the shift, which was the uniqueness of the present chiral plasmonic nanostructure.
{"title":"Giant circular dichroic SHG behavior of double SP resonant chiral aluminum nanorod dimer structures","authors":"A. Sugita, Kenshin Muroi, Sota Tamotsu","doi":"10.1117/12.2676362","DOIUrl":"https://doi.org/10.1117/12.2676362","url":null,"abstract":"This paper reports on the giant circular dichroic second-harmonic generation (CD-SHG) behavior of double SP resonant chiral Al nanorod (AlNR) dimer structures. The two AlNRs are aligned in a straight line. It becomes chiral, when one of the AlNRs is shifted laterally from it. We obtained CD-SHG signals up to 0.5 for the corresponding amount of the shift. Additionally, the sign of the CD-SHG was reversed, when the sign of the shift was reversed. The amount of the CD-SHG was flexibly tunable by changing the amount of the shift, which was the uniqueness of the present chiral plasmonic nanostructure.","PeriodicalId":13820,"journal":{"name":"International Conference on Nanoscience, Engineering and Technology (ICONSET 2011)","volume":"5 1","pages":"126480D - 126480D-4"},"PeriodicalIF":0.0,"publicationDate":"2023-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84618974","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Microscopic laser light interaction with matter has many consequences. That result depends on many factors: the medium, the matter involved, the light intensity, the wavelength, and the many ways of light, among others. In this contribution, we are going to discuss several results observed when light interacts with matter under different conditions. The observation did use a standard optical fiber and near-infrared radiation. We are going to discuss the basic linear and angular momentum transference, optical trapping; light energy conversions, such as absorption, heating, photochemical reactions, and micro-thermocavitation.
{"title":"Optical fiber and the microscopic interactions of light with matter","authors":"H. H. Cerecedo-Núñez, P. Padilla-Sosa","doi":"10.1117/12.2676886","DOIUrl":"https://doi.org/10.1117/12.2676886","url":null,"abstract":"Microscopic laser light interaction with matter has many consequences. That result depends on many factors: the medium, the matter involved, the light intensity, the wavelength, and the many ways of light, among others. In this contribution, we are going to discuss several results observed when light interacts with matter under different conditions. The observation did use a standard optical fiber and near-infrared radiation. We are going to discuss the basic linear and angular momentum transference, optical trapping; light energy conversions, such as absorption, heating, photochemical reactions, and micro-thermocavitation.","PeriodicalId":13820,"journal":{"name":"International Conference on Nanoscience, Engineering and Technology (ICONSET 2011)","volume":"31 1","pages":"126490R - 126490R-4"},"PeriodicalIF":0.0,"publicationDate":"2023-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90663248","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
J. Craft, Muhammad Waqas Shabbir, D. Englund, R. Osgood, M. N. Leuenberger
We show that graphene decorated with Ag nanodisks realizes spectrally selective thermal emission by means of acoustic graphene plasmons (AGPs) localized between graphene and the Ag nanodisks inside a dielectric material. Our finite-difference time domain (FDTD) calculations show that the spectrally selective thermal radiation emission can be tuned by means of a gate voltage into two different wavelength regimes, namely the atmospherically opaque regime between λ = 5 μm and λ = 8 μm or the atmospherically transparent regime between λ = 8 μm and λ = 12 μm. This allows for electrical switching between a radiative heat trapping mode for the former regime and a radiative cooling mode for the latter regime.
{"title":"Spectrally selective thermal emission from graphene decorated with silver nanodisks","authors":"J. Craft, Muhammad Waqas Shabbir, D. Englund, R. Osgood, M. N. Leuenberger","doi":"10.1117/12.2692387","DOIUrl":"https://doi.org/10.1117/12.2692387","url":null,"abstract":"We show that graphene decorated with Ag nanodisks realizes spectrally selective thermal emission by means of acoustic graphene plasmons (AGPs) localized between graphene and the Ag nanodisks inside a dielectric material. Our finite-difference time domain (FDTD) calculations show that the spectrally selective thermal radiation emission can be tuned by means of a gate voltage into two different wavelength regimes, namely the atmospherically opaque regime between λ = 5 μm and λ = 8 μm or the atmospherically transparent regime between λ = 8 μm and λ = 12 μm. This allows for electrical switching between a radiative heat trapping mode for the former regime and a radiative cooling mode for the latter regime.","PeriodicalId":13820,"journal":{"name":"International Conference on Nanoscience, Engineering and Technology (ICONSET 2011)","volume":"68 1","pages":"126480K - 126480K-9"},"PeriodicalIF":0.0,"publicationDate":"2023-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"80885289","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
P. Viera-González, G. Sánchez-Guerrero, Edgar Martínez-Guerra, Eduardo Martínez-Guerra, Rodolfo Cortés Martínez
Materials characterization is essential since it is the basis for understanding materials’ physical and chemical properties before being used in any application. Nowadays, expensive equipment such as scanning electron microscopy and X-ray diffraction for thin film characterization at atomic layers are used. Atomic layer deposition (ALD) is a technique for growing thin films with a wide range of applications. The film thickness range is usually 1-500 nm. Plasmonic sensors are a low-cost technique for material characterization, including inorganic and organic thin films. The thickness resolution ranges from a fraction of a nanometer (monolayers) to several micrometers. These devices exploit the interaction of light with matter using surface plasmon resonance as a method based on the optoelectronic phenomenon. Kretschmann geometry continues to be a configuration widely used as an experimental setup to excite surface plasmon resonance in the characterization of different materials. It consists of a coupler prism with a thin metal film. The incident light in the total internal reflection at a specific angle, the evanescent wave transfers the energy to the electrons plasma of metal giving place surface plasmon resonance (SPR). The SPR effect in metals is highly sensitive to variations in the optical properties of the interface. We use the Kretschmann configuration and the matrix transfer method to analyze the performance numerically to achieve the optime parameters of design for the sensor’s performance. In this work, we developed a protocol to design and build a plasmonic sensor for the characterization of materials at the atomic layer level.
{"title":"Protocol to design plasmonic sensors for the characterization of materials at the atomic scale","authors":"P. Viera-González, G. Sánchez-Guerrero, Edgar Martínez-Guerra, Eduardo Martínez-Guerra, Rodolfo Cortés Martínez","doi":"10.1117/12.2676164","DOIUrl":"https://doi.org/10.1117/12.2676164","url":null,"abstract":"Materials characterization is essential since it is the basis for understanding materials’ physical and chemical properties before being used in any application. Nowadays, expensive equipment such as scanning electron microscopy and X-ray diffraction for thin film characterization at atomic layers are used. Atomic layer deposition (ALD) is a technique for growing thin films with a wide range of applications. The film thickness range is usually 1-500 nm. Plasmonic sensors are a low-cost technique for material characterization, including inorganic and organic thin films. The thickness resolution ranges from a fraction of a nanometer (monolayers) to several micrometers. These devices exploit the interaction of light with matter using surface plasmon resonance as a method based on the optoelectronic phenomenon. Kretschmann geometry continues to be a configuration widely used as an experimental setup to excite surface plasmon resonance in the characterization of different materials. It consists of a coupler prism with a thin metal film. The incident light in the total internal reflection at a specific angle, the evanescent wave transfers the energy to the electrons plasma of metal giving place surface plasmon resonance (SPR). The SPR effect in metals is highly sensitive to variations in the optical properties of the interface. We use the Kretschmann configuration and the matrix transfer method to analyze the performance numerically to achieve the optime parameters of design for the sensor’s performance. In this work, we developed a protocol to design and build a plasmonic sensor for the characterization of materials at the atomic layer level.","PeriodicalId":13820,"journal":{"name":"International Conference on Nanoscience, Engineering and Technology (ICONSET 2011)","volume":"79 1","pages":"126480B - 126480B-6"},"PeriodicalIF":0.0,"publicationDate":"2023-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78446154","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Fabian C. Cubillos-Morales, G. Martínez Niconoff, I. I. Cazares Aguilar
This work introduces an interesting configuration for exciting structured surface plasmon-polaritons (SSPP) by analyzing wave propagation on a composite dielectric-metal surface. In particular, we focus on the coupling of interfered evanescent waves with structured SPP. This innovative approach unlocks new avenues for enhancing plasmon optics models, encompassing diffraction, interference, and focalization. By exploring the potential of this configuration, we improved the understanding and application of structured SPP in various optical phenomena.
{"title":"Structured surface plasmon generated with interfered evanescent waves","authors":"Fabian C. Cubillos-Morales, G. Martínez Niconoff, I. I. Cazares Aguilar","doi":"10.1117/12.2677890","DOIUrl":"https://doi.org/10.1117/12.2677890","url":null,"abstract":"This work introduces an interesting configuration for exciting structured surface plasmon-polaritons (SSPP) by analyzing wave propagation on a composite dielectric-metal surface. In particular, we focus on the coupling of interfered evanescent waves with structured SPP. This innovative approach unlocks new avenues for enhancing plasmon optics models, encompassing diffraction, interference, and focalization. By exploring the potential of this configuration, we improved the understanding and application of structured SPP in various optical phenomena.","PeriodicalId":13820,"journal":{"name":"International Conference on Nanoscience, Engineering and Technology (ICONSET 2011)","volume":"50 1","pages":"126480I - 126480I-5"},"PeriodicalIF":0.0,"publicationDate":"2023-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74336263","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Juan Pablo Cuanalo Fernandez, N. Korneev, I. Cosme-Bolanos, María Beatriz de la Mora Mojica, Irving Gazga Gurrión, S. Mansurova, R. Ramos García
In this study, we investigate the phenomenon of nearly zero reflectance and associated phase singularity in a random array of gold nanoislands (Au NI) both theoretically and experimentally. The Au NI were produced via solid-state thermal dewetting of ultrathin gold films, which were magnetron sputtered onto a glass substrate. The morphology of the nanoislands was characterized using scanning electron microscopy and atomic force microscopy. To understand the plasmonic response of the random array of Au NI, we conducted reflectance measurements for both s and p polarized beams demonstrating the p. These measurements were performed using the attenuated total internal reflectance configuration. A partial state of topological darkness in a random array of Au NI was demonstrated by showing nearly zero reflection for the p polarization component. Additionally, we employed a common path spectral interferometer to measure the differential phase spectra. Our findings revealed that the differential phase spectra exhibited abrupt ±π phase jumps, indicating the presence of a phase singularity regime. Moreover, we demonstrated high bulk reflectance index sensitivity (RIS) within this regime. To validate our experimental results, we compared them with analytical reflectance and phase spectra obtained through the application of island film theory. The agreement between the experimental and theoretical predictions provided strong confirmation of our measurement technique.
{"title":"Topological darkness in random gold metasurfaces for high sensitivity detection using phase interrogation","authors":"Juan Pablo Cuanalo Fernandez, N. Korneev, I. Cosme-Bolanos, María Beatriz de la Mora Mojica, Irving Gazga Gurrión, S. Mansurova, R. Ramos García","doi":"10.1117/12.2676565","DOIUrl":"https://doi.org/10.1117/12.2676565","url":null,"abstract":"In this study, we investigate the phenomenon of nearly zero reflectance and associated phase singularity in a random array of gold nanoislands (Au NI) both theoretically and experimentally. The Au NI were produced via solid-state thermal dewetting of ultrathin gold films, which were magnetron sputtered onto a glass substrate. The morphology of the nanoislands was characterized using scanning electron microscopy and atomic force microscopy. To understand the plasmonic response of the random array of Au NI, we conducted reflectance measurements for both s and p polarized beams demonstrating the p. These measurements were performed using the attenuated total internal reflectance configuration. A partial state of topological darkness in a random array of Au NI was demonstrated by showing nearly zero reflection for the p polarization component. Additionally, we employed a common path spectral interferometer to measure the differential phase spectra. Our findings revealed that the differential phase spectra exhibited abrupt ±π phase jumps, indicating the presence of a phase singularity regime. Moreover, we demonstrated high bulk reflectance index sensitivity (RIS) within this regime. To validate our experimental results, we compared them with analytical reflectance and phase spectra obtained through the application of island film theory. The agreement between the experimental and theoretical predictions provided strong confirmation of our measurement technique.","PeriodicalId":13820,"journal":{"name":"International Conference on Nanoscience, Engineering and Technology (ICONSET 2011)","volume":"15 1","pages":"126480E - 126480E-9"},"PeriodicalIF":0.0,"publicationDate":"2023-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85277896","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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