{"title":"Microfabrication using focused ion beams part II","authors":"Kenji Gamo, Susumu Namba","doi":"10.1016/0959-3527(90)90183-T","DOIUrl":null,"url":null,"abstract":"<div><p>Soon all semiconductor devices could be made this way is a claim often made for focused ion beam technology. As the Osaka University team relates in this overview, numerous labs around the world have used FIB to dope, deposit, etch and define semiconductor and other films to microfabricate circuits and devices. FIB has yet to become a routine method but the techniques under this banner hold much promise for the production of next generation devices.</p></div>","PeriodicalId":100494,"journal":{"name":"Euro III-Vs Review","volume":"3 6","pages":"Pages 47-48"},"PeriodicalIF":0.0000,"publicationDate":"1990-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/0959-3527(90)90183-T","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Euro III-Vs Review","FirstCategoryId":"1085","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/095935279090183T","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2
Abstract
Soon all semiconductor devices could be made this way is a claim often made for focused ion beam technology. As the Osaka University team relates in this overview, numerous labs around the world have used FIB to dope, deposit, etch and define semiconductor and other films to microfabricate circuits and devices. FIB has yet to become a routine method but the techniques under this banner hold much promise for the production of next generation devices.