Facile Synthesis of 1D and 2D Zinc Sulfide Nanostructures on Multi-Layered Graphene

Allon Sm, H. Al-Shukaili, T. Mohiuddin, S. Karthikeyan, R. Al-Busaidi
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Abstract

ZnS nanostructures have been fabricated over multi-layered graphene substrate via chemical vapor deposition technique. A controllable morphology of grown ZnS nanostructures, including (1D) nanowires, (2D) discs and nano-flakes were achieved by direct carbo-thermal evaporation of (1:1) ZnS and graphite powders mixture. The substrate location and therefore its temperature was found as a crucial growth parameter, which controls the morphology of the grown ZnS Nanostructures. The average diameter of the ZnS 1-D nanowires, at T= 400 °C, 2-D planar filling nano-discs, at T=300 °C, are 0.418 ± 0.007 μm, 0.600 ± 0. 020 μm respectively. At lower substrate temperature, <300 °C, a periodic round shaped features or flakes with some nanowire at their edges were formed due to nanodiscs amalgamation. This is because at a lower temperature, higher liquid instability leads to more nucleation sites and high conversion rate from liquid to solid state and therefore small nano-discs will merge to form larger flake structure. All products are cubic sphalerite ZnS in structure and with preferentially intense (111) planes. The lattice parameter for (220) planes was 5.72 A with 5.92% strain % clearly indicate that they are in tensile stress region. Raman was utilized to define the existence of graphene layers and the ZnS nanostructures (Magnified range100-700 cm-1) on top of multigraphene layers before and after growth process. In addition, ZnS nanostructures PL emissions of violet and cyan-blue centered at 3.23ev and (2.41-2.53ev) respectively were detected and attributed to defects such as Zn2+ vacancies, S2− interstitials, and dislocations. Graphene-based inorganic hybrid nanostructures deliver several potential applications in optoelectronics and nanoscale electronics such as photodetectors, photovoltaic and optical devices.
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多层石墨烯上一维和二维硫化锌纳米结构的简易合成
利用化学气相沉积技术在多层石墨烯衬底上制备了ZnS纳米结构。通过直接碳热蒸发(1:1)的ZnS和石墨粉混合物,获得了可控制的生长ZnS纳米结构,包括(1D)纳米线、(2D)纳米片和纳米片。发现衬底位置及其温度是一个关键的生长参数,它控制着生长的ZnS纳米结构的形貌。在温度为400℃时,zns1 -d纳米线的平均直径为0.418±0.007 μm,在温度为300℃时,二维平面填充纳米片的平均直径为0.600±0 μm。020 μm。在较低的衬底温度(<300°C)下,由于纳米片的合并,形成了周期性的圆形特征或边缘有纳米线的薄片。这是因为在较低的温度下,较高的液体不稳定性导致更多的成核位点和高的液体到固体的转化率,因此小的纳米圆盘会合并形成较大的片状结构。所有产品在结构上均为立方闪锌矿ZnS,具有优先强的(111)平面。(220)平面的点阵参数为5.72 A,应变%为5.92%,处于拉应力区。利用拉曼光谱来确定生长前后石墨烯层和ZnS纳米结构(放大范围100-700 cm-1)在多层石墨烯层上的存在。此外,还检测到了以3.23ev和(2.41 ~ 2.53ev)为中心的紫色和蓝蓝色ZnS纳米结构的PL发射,并将其归因于Zn2+空位、S2−间隙和位错等缺陷。基于石墨烯的无机杂化纳米结构在光电子学和纳米电子学领域有许多潜在的应用,如光电探测器、光伏和光学器件。
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