J. Singh, K. Goretta, D. Kupperman, J. Routbort, J. F. Rhodes
{"title":"Fracture toughness and strength of SiC-whisker-reinforced Si sub 3 N sub 4 composites","authors":"J. Singh, K. Goretta, D. Kupperman, J. Routbort, J. F. Rhodes","doi":"10.1111/J.1551-2916.1988.TB00234.X","DOIUrl":null,"url":null,"abstract":"The fracture toughness (K{sub IC}), strength, and elastic moduli of hot-pressed Si{sub 3}N{sub 4} reinforced with SiC whiskers were measured at room temperature over a range of SiC content from 0 to 20 wt%. The K{sub IC} was determined from cracks produced by Vickers indentation, the elastic moduli were determined by an ultrasonic technique, and the strength was measured by four-point bending. Although K{sub IC} increases from 4 to 7 MN {center dot} m{sup {minus}3/2} with the addition of 20 wt% SiC, the corresponding increase in strength is relatively small, i.e., from 375 to 550 MPa. Scanning electron microscopy reveals that the small increase in strength is partly related to processing-induced critical flaws.","PeriodicalId":7260,"journal":{"name":"Advanced Ceramic Materials","volume":"27 1","pages":"357-360"},"PeriodicalIF":0.0000,"publicationDate":"1988-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"32","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Advanced Ceramic Materials","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1111/J.1551-2916.1988.TB00234.X","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 32
Abstract
The fracture toughness (K{sub IC}), strength, and elastic moduli of hot-pressed Si{sub 3}N{sub 4} reinforced with SiC whiskers were measured at room temperature over a range of SiC content from 0 to 20 wt%. The K{sub IC} was determined from cracks produced by Vickers indentation, the elastic moduli were determined by an ultrasonic technique, and the strength was measured by four-point bending. Although K{sub IC} increases from 4 to 7 MN {center dot} m{sup {minus}3/2} with the addition of 20 wt% SiC, the corresponding increase in strength is relatively small, i.e., from 375 to 550 MPa. Scanning electron microscopy reveals that the small increase in strength is partly related to processing-induced critical flaws.