Fracture toughness and strength of SiC-whisker-reinforced Si sub 3 N sub 4 composites

J. Singh, K. Goretta, D. Kupperman, J. Routbort, J. F. Rhodes
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引用次数: 32

Abstract

The fracture toughness (K{sub IC}), strength, and elastic moduli of hot-pressed Si{sub 3}N{sub 4} reinforced with SiC whiskers were measured at room temperature over a range of SiC content from 0 to 20 wt%. The K{sub IC} was determined from cracks produced by Vickers indentation, the elastic moduli were determined by an ultrasonic technique, and the strength was measured by four-point bending. Although K{sub IC} increases from 4 to 7 MN {center dot} m{sup {minus}3/2} with the addition of 20 wt% SiC, the corresponding increase in strength is relatively small, i.e., from 375 to 550 MPa. Scanning electron microscopy reveals that the small increase in strength is partly related to processing-induced critical flaws.
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sic晶须增强Si亚3n亚4复合材料的断裂韧性和强度
在SiC含量为0 ~ 20 wt%范围内,测量了SiC晶须增强的热压Si{sub 3}N{sub 4}的断裂韧性(K{sub IC})、强度和弹性模量。K{sub IC}由维氏压痕产生的裂纹确定,弹性模量由超声波技术确定,强度由四点弯曲测量。当SiC添加量为20 wt%时,K{sub IC}从4 MN {center dot} m{sup{-}3/2}增加到7 MN {center dot} m{sup{-}3/2},但强度的增加相对较小,从375 MPa增加到550 MPa。扫描电镜显示,强度的小幅增加部分与加工引起的临界缺陷有关。
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