Properties of Electrosynthesized Cobalt Doped Zinc Selenide Thin Films Deposited at Varying Time

Ezenwaka, L. N., Okoli, N. L., Okereke, N. A., Ezenwa, I. A., Nwori, N. A.
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引用次数: 5

Abstract

Time optimized cobalt-doped zinc selenide thin films have been successfully electrodeposited on fluorine-doped tin oxide substrates. The films were deposited at the varying time of 1 min, 3 mins, and 5 mins respectively. Film thickness, optical, structural, electrical, and morphological properties of the deposited thin films were evaluated. Film thickness estimated using the gravimetric method increased from 294.35 nm to 399.62 nm as deposition time increased. Optical properties showed that the absorbance of the films ranged from 13.58% to 83.15% and was found to increase as deposition time increased. Transmittance ranged from 24.40% to 73.15% and was found to decrease as deposition time increased. The reflectance of the films was found to be low while the energy band gap ranged between 2.10 eV and 2.85 eV. Structural properties confirmed the deposition of ZnSe thin film with crystallite size values that fall between 14.68 nm and 18.60 nm. Dislocation density is ranged from 4.66 × 1015 lines/m2 to 2.97 × 1015 lines/m2 while microstrain ranged between 8.53 × 10-3 and 5.83 × 10-3. Crystallite sizes of the films were found to increase as deposition time increased while dislocation density and microstrain were found to decrease as deposition time increased. Electrical properties showed that the deposited films are semiconducting films with electrical resistivity values of 1.54 × 105 Ω cm-1.83 × 104 Ω cm and electrical conductivity values of 6.30 × 10-6 S/cm-5.47 × 10-5 S/cm. The micrograph of the films showed that the films were made up of nanoparticles and nanofibres of different dimensions. Energy-Dispersive X-Ray Spectroscopy (EDS) spectra of the films confirmed the presence of cobalt, zinc, and selenium.
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不同沉积时间电合成钴掺杂硒化锌薄膜的性能
在掺氟氧化锡衬底上成功地电沉积了时间优化的掺钴硒化锌薄膜。沉积时间分别为1 min、3 min和5 min。对薄膜的厚度、光学、结构、电学和形态学等性能进行了评价。随着沉积时间的延长,用重量法测得的膜厚从294.35 nm增加到399.62 nm。光学性质表明,膜的吸光度范围为13.58% ~ 83.15%,吸光度随沉积时间的增加而增加。透过率为24.40% ~ 73.15%,随沉积时间的增加而降低。薄膜的反射率较低,能带隙在2.10 ~ 2.85 eV之间。结构性能证实了ZnSe薄膜的沉积,晶粒尺寸在14.68 ~ 18.60 nm之间。位错密度为4.66 × 1015 lines/m2 ~ 2.97 × 1015 lines/m2,微应变为8.53 × 10-3 ~ 5.83 × 10-3。随着沉积时间的延长,薄膜的晶粒尺寸增大,而位错密度和微应变随沉积时间的延长而减小。电学性能表明,薄膜为半导体薄膜,电阻率为1.54 × 105 Ω cm ~ 1.83 × 104 Ω cm,电导率为6.30 × 10-6 S/cm ~ 5.47 × 10-5 S/cm。薄膜的显微照片显示,薄膜由不同尺寸的纳米颗粒和纳米纤维组成。薄膜的能量色散x射线光谱(EDS)证实了钴、锌和硒的存在。
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