25.3 GHz, 4.1 mW VCO with 34.8% tuning range using a switched substrate-shield inductor

Pawan Agarwal, P. Pande, D. Heo
{"title":"25.3 GHz, 4.1 mW VCO with 34.8% tuning range using a switched substrate-shield inductor","authors":"Pawan Agarwal, P. Pande, D. Heo","doi":"10.1109/MWSYM.2015.7166890","DOIUrl":null,"url":null,"abstract":"A wide tuning range CMOS VCO based on a switched substrate-shield inductor is presented. The proposed VCO uses a high quality factor, switchable inductor with smaller parasitics for frequency tuning range extension. Inductance is switched by controlling the eddy currents in a modified, floating substrate-shield. Using the proposed design, a 29 % inductance switching is achieved while maintaining a high quality factor of > 15.5. The prototype VCO shows an excellent frequency tuning range of 34.8 % and a phase noise of -120.1 dBc/Hz at 10 MHz offset for 25.3 GHz carrier frequency. This VCO has a FOMT of 192.1±2.5 dBc/Hz across the tuning range with only 4.1 mW power consumption.","PeriodicalId":6493,"journal":{"name":"2015 IEEE MTT-S International Microwave Symposium","volume":"18 1","pages":"1-4"},"PeriodicalIF":0.0000,"publicationDate":"2015-07-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"13","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2015 IEEE MTT-S International Microwave Symposium","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MWSYM.2015.7166890","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 13

Abstract

A wide tuning range CMOS VCO based on a switched substrate-shield inductor is presented. The proposed VCO uses a high quality factor, switchable inductor with smaller parasitics for frequency tuning range extension. Inductance is switched by controlling the eddy currents in a modified, floating substrate-shield. Using the proposed design, a 29 % inductance switching is achieved while maintaining a high quality factor of > 15.5. The prototype VCO shows an excellent frequency tuning range of 34.8 % and a phase noise of -120.1 dBc/Hz at 10 MHz offset for 25.3 GHz carrier frequency. This VCO has a FOMT of 192.1±2.5 dBc/Hz across the tuning range with only 4.1 mW power consumption.
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
25.3 GHz, 4.1 mW VCO,使用开关基板屏蔽电感器,调谐范围34.8%
提出了一种基于开关基板-屏蔽电感的宽调谐范围CMOS压控振荡器。所提出的压控振荡器采用高品质因数、可切换电感,寄生较小,可实现频率调谐范围的扩展。电感是通过控制涡流在一个改进的,浮动基板屏蔽。采用所提出的设计,在保持> 15.5的高质量因数的同时,实现了29%的电感开关。在25.3 GHz载波频率下,该原型VCO在10 MHz偏置下的频率调谐范围为34.8%,相位噪声为-120.1 dBc/Hz。该VCO在整个调谐范围内的fmt为192.1±2.5 dBc/Hz,功耗仅为4.1 mW。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
Educating Signal Integrity engineers for challenges in high-speed electronics A planar 75% efficient GaN 1.2-GHz DC-DC converter with self-synchronous rectifier Compact microstrip diplexer based on a novel coupling topology Spectrum-aware jammer suppression using evanescent-mode cavity filters 25.3 GHz, 4.1 mW VCO with 34.8% tuning range using a switched substrate-shield inductor
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1