{"title":"Single-Photon Detection by Cavity-Assisted All-Optical Gain","authors":"C. Panuski, M. Pant, M. Heuck, D. Englund","doi":"10.1103/PhysRevB.99.205303","DOIUrl":null,"url":null,"abstract":"Considering the free-carrier dispersion effect at the limit of a single photoexcited charge carrier pair suggests the possibility of realizing single-photon detection through a high-Q/V semiconductor cavity.","PeriodicalId":6498,"journal":{"name":"2018 Conference on Lasers and Electro-Optics (CLEO)","volume":"19 1","pages":"1-2"},"PeriodicalIF":0.0000,"publicationDate":"2018-12-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 Conference on Lasers and Electro-Optics (CLEO)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1103/PhysRevB.99.205303","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3
Abstract
Considering the free-carrier dispersion effect at the limit of a single photoexcited charge carrier pair suggests the possibility of realizing single-photon detection through a high-Q/V semiconductor cavity.
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